TY - JOUR
T1 - Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications
AU - Li, Zheng
AU - Eremin, V.
AU - Harkonen, J.
AU - Luukka, P.
AU - Tuominen, E.
AU - Tuovinen, E.
AU - Verbitskaya, E.
PY - 2010/5/11
Y1 - 2010/5/11
N2 - Modeling and simulations have been performed for the charge injected diodes (CID) for the application in SLHC. MIP-induced current and charges have been calculated for segmented detectors with various radiation fluences, up to the highest SLHC fluence of 1 × 1016 neq/cm2. Although the main advantage of CID detectors is their virtual full depletion at any radiation fluence at a modest bias voltage (< 600 V), the simulation of CID and fitting to the existing data have shown that the CID operation mode also reduces the free carrier trapping, resulting in a much higher charge collection at the SLHC fluence than that in a standard Si detector. The reduction in free carrier trapping by almost one order of magnitude is due to the fact that the CID mode also pre-fills the traps, making them neutral and not active in trapping. It has been found that, electron traps can be pre-filled by injection of electrons from the n+ contact, and hole traps can be pre-filled by injection of holes from the p+ contact. The CID mode of detector operation can be achieved by a modestly low temperature of around -40°C, achievable by the proposed CO2 cooling for detector upgrades in SLHC. High charge collection comparable to the 3D electrode Si detectors makes the CID Si detector a valuable alternative for SLHC detectors for its much easier fabrication process.
AB - Modeling and simulations have been performed for the charge injected diodes (CID) for the application in SLHC. MIP-induced current and charges have been calculated for segmented detectors with various radiation fluences, up to the highest SLHC fluence of 1 × 1016 neq/cm2. Although the main advantage of CID detectors is their virtual full depletion at any radiation fluence at a modest bias voltage (< 600 V), the simulation of CID and fitting to the existing data have shown that the CID operation mode also reduces the free carrier trapping, resulting in a much higher charge collection at the SLHC fluence than that in a standard Si detector. The reduction in free carrier trapping by almost one order of magnitude is due to the fact that the CID mode also pre-fills the traps, making them neutral and not active in trapping. It has been found that, electron traps can be pre-filled by injection of electrons from the n+ contact, and hole traps can be pre-filled by injection of holes from the p+ contact. The CID mode of detector operation can be achieved by a modestly low temperature of around -40°C, achievable by the proposed CO2 cooling for detector upgrades in SLHC. High charge collection comparable to the 3D electrode Si detectors makes the CID Si detector a valuable alternative for SLHC detectors for its much easier fabrication process.
KW - Charge collection
KW - CID
KW - Radiation hardness
KW - Si detectors
UR - http://www.scopus.com/inward/record.url?scp=79960237786&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2009.10.036
DO - 10.1016/j.nima.2009.10.036
M3 - Article
AN - SCOPUS:79960237786
SN - 0168-9002
VL - 617
SP - 552
EP - 557
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1-3
ER -