Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

A. Haarahiltunen; A. Varpula; H. Savin

doi:10.1063/1.3622511

Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

A. Haarahiltunen (Corresponding Author), A. Varpula, H. Savin

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

Original language	English
Article number	043505
Journal	Journal of Applied Physics
Volume	110
Issue number	4
DOIs	https://doi.org/10.1063/1.3622511
Publication status	Published - 15 Aug 2011
MoE publication type	A1 Journal article-refereed

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10.1063/1.3622511

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abstract = "We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.",

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AB - We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

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Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

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