Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

A. Haarahiltunen (Corresponding Author), A. Varpula, H. Savin

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

Original languageEnglish
Article number043505
JournalJournal of Applied Physics
Volume110
Issue number4
DOIs
Publication statusPublished - 15 Aug 2011
MoE publication typeA1 Journal article-refereed

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contamination
resonators
ions
silicon
temperature

Cite this

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abstract = "We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.",
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Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator. / Haarahiltunen, A. (Corresponding Author); Varpula, A.; Savin, H.

In: Journal of Applied Physics, Vol. 110, No. 4, 043505, 15.08.2011.

Research output: Contribution to journalArticleScientificpeer-review

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