Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

A. Haarahiltunen; Aapo Varpula; H. Savin

doi:10.1063/1.3622511

Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

A. Haarahiltunen^*
, Aapo Varpula
, H. Savin

^*Corresponding author for this work

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

Original language	English
Article number	043505
Journal	Journal of Applied Physics
Volume	110
Issue number	4
DOIs	https://doi.org/10.1063/1.3622511
Publication status	Published - 15 Aug 2011
MoE publication type	A1 Journal article-refereed

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@article{1034e5d7dc3b4df69ec5414ef9201d54,

title = "Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator",

abstract = "We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.",

author = "A. Haarahiltunen and Aapo Varpula and H. Savin",

year = "2011",

month = aug,

day = "15",

doi = "10.1063/1.3622511",

language = "English",

volume = "110",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics (AIP)",

number = "4",

}

TY - JOUR

T1 - Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

AU - Haarahiltunen, A.

AU - Varpula, Aapo

AU - Savin, H.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

AB - We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.

UR - https://www.scopus.com/pages/publications/80052421585

U2 - 10.1063/1.3622511

DO - 10.1063/1.3622511

M3 - Article

AN - SCOPUS:80052421585

SN - 0021-8979

VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043505

ER -

Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

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