Modeling the spectral shape of InGaAlP-based red light-emitting diodes

Anna Vaskuri (Corresponding Author), Hans Baumgartner, Petri Kärhä, György Andor, Erkki Ikonen

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Abstract

We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8%) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively
Original languageEnglish
Article number203103
JournalJournal of Applied Physics
Volume118
Issue number20
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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light emitting diodes
quantum wells
step functions
Boltzmann distribution
coefficients
emission spectra
temperature
electric potential

Cite this

Vaskuri, A., Baumgartner, H., Kärhä, P., Andor, G., & Ikonen, E. (2015). Modeling the spectral shape of InGaAlP-based red light-emitting diodes. Journal of Applied Physics, 118(20), [203103]. https://doi.org/10.1063/1.4936322
Vaskuri, Anna ; Baumgartner, Hans ; Kärhä, Petri ; Andor, György ; Ikonen, Erkki. / Modeling the spectral shape of InGaAlP-based red light-emitting diodes. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 20.
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abstract = "We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8{\%}) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively",
author = "Anna Vaskuri and Hans Baumgartner and Petri K{\"a}rh{\"a} and Gy{\"o}rgy Andor and Erkki Ikonen",
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Vaskuri, A, Baumgartner, H, Kärhä, P, Andor, G & Ikonen, E 2015, 'Modeling the spectral shape of InGaAlP-based red light-emitting diodes', Journal of Applied Physics, vol. 118, no. 20, 203103. https://doi.org/10.1063/1.4936322

Modeling the spectral shape of InGaAlP-based red light-emitting diodes. / Vaskuri, Anna (Corresponding Author); Baumgartner, Hans; Kärhä, Petri; Andor, György; Ikonen, Erkki.

In: Journal of Applied Physics, Vol. 118, No. 20, 203103, 2015.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Modeling the spectral shape of InGaAlP-based red light-emitting diodes

AU - Vaskuri, Anna

AU - Baumgartner, Hans

AU - Kärhä, Petri

AU - Andor, György

AU - Ikonen, Erkki

PY - 2015

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N2 - We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8%) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively

AB - We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8%) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively

U2 - 10.1063/1.4936322

DO - 10.1063/1.4936322

M3 - Article

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 203103

ER -