### Abstract

Original language | English |
---|---|

Article number | 203103 |

Journal | Journal of Applied Physics |

Volume | 118 |

Issue number | 20 |

DOIs | |

Publication status | Published - 2015 |

MoE publication type | A1 Journal article-refereed |

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*Journal of Applied Physics*,

*118*(20), [203103]. https://doi.org/10.1063/1.4936322

}

*Journal of Applied Physics*, vol. 118, no. 20, 203103. https://doi.org/10.1063/1.4936322

**Modeling the spectral shape of InGaAlP-based red light-emitting diodes.** / Vaskuri, Anna (Corresponding Author); Baumgartner, Hans; Kärhä, Petri; Andor, György; Ikonen, Erkki.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Modeling the spectral shape of InGaAlP-based red light-emitting diodes

AU - Vaskuri, Anna

AU - Baumgartner, Hans

AU - Kärhä, Petri

AU - Andor, György

AU - Ikonen, Erkki

PY - 2015

Y1 - 2015

N2 - We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8%) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively

AB - We have developed a spectral model for describing the shape of the emission spectrum of InGaAlP-based red light-emitting diodes (LEDs) with quantum-well structure. The model is based on Maxwell-Boltzmann distribution with junction temperature Tj and an experimental two-dimensional joint density of states (DOS). We model the DOS with a sum of two exponentially broadened step functions describing the two lowest sub-bands in semiconductor quantum well. The relative locations ΔE1 = 0 meV and ΔE2 = 112.7 meV above the band gap energy Eg = 1.983 eV and the ratio 2.13 of the step heights were fixed using an experimental DOS extracted from a LED spectrum measured at known Tj and driving current I. The model can then be fitted to other spectra of other LED samples at varied Tj and I by varying the fitting parameters Eg, Tj, and the broadening of the sub-band edges. The model was tested for three LED samples over I = 200–370 mA and Tj = 303–398 K. Junction temperatures obtained by modeling were compared with calibrated Tj obtained by the forward voltage method. The mean absolute difference was about 2.9 K (0.8%) over the whole region studied and the maximum difference was 8.5 K. The thermal coefficient measured for Eg was −0.509 meV K−1. For the first and second sub-band edges, the thermal broadening coefficients were 18 μeV K−1 and 37 μeV K−1, respectively

U2 - 10.1063/1.4936322

DO - 10.1063/1.4936322

M3 - Article

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 203103

ER -