Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications

Ella Paasio; Mika Prunnila; Sayani Majumdar

doi:10.1109/NVMSA58981.2023.00019

Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications

Ella Paasio, Mika Prunnila, Sayani Majumdar

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices. Such model is expected to be computationally efficient in circuit design with SPICE and Verilog-A. Our results represent an important advancement towards modelling of ferroelectric HZO capacitors for large-scale memory and neuromorphic circuit integration.

Original language	English
Title of host publication	12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	62-63
ISBN (Electronic)	979-8-3503-4496-7
ISBN (Print)	979-8-3503-4497-4
DOIs	https://doi.org/10.1109/NVMSA58981.2023.00019
Publication status	Published - 2023
MoE publication type	A4 Article in a conference publication
Event	12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023 - Niigata, Japan Duration: 30 Aug 2023 → 1 Sept 2023

Publication series

Series	IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)

Conference

Conference	12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023
Country/Territory	Japan
City	Niigata
Period	30/08/23 → 1/09/23

Funding

Authors acknowledge Academy of Finland (Grant no. 345068 and 350667) for financial support. The work used experimental facilities of Micronova National Research Infrastructure for Micro-and Nanotechnology.

Keywords

Ferro electricity
In-memory computing
Jiles-Atherton model
Memory
Neuromorphic computing

Access to Document

10.1109/NVMSA58981.2023.00019

Cite this

Paasio, Ella ; Prunnila, Mika ; Majumdar, Sayani. / Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications. 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. IEEE Institute of Electrical and Electronic Engineers, 2023. pp. 62-63 (IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)).

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title = "Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications",

abstract = "We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices. Such model is expected to be computationally efficient in circuit design with SPICE and Verilog-A. Our results represent an important advancement towards modelling of ferroelectric HZO capacitors for large-scale memory and neuromorphic circuit integration.",

keywords = "Ferro electricity, In-memory computing, Jiles-Atherton model, Memory, Neuromorphic computing",

author = "Ella Paasio and Mika Prunnila and Sayani Majumdar",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023 ; Conference date: 30-08-2023 Through 01-09-2023",

year = "2023",

doi = "10.1109/NVMSA58981.2023.00019",

language = "English",

isbn = "979-8-3503-4497-4",

series = "IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

pages = "62--63",

booktitle = "12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023",

address = "United States",

}

Paasio, E, Prunnila, M & Majumdar, S 2023, Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications. in 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. IEEE Institute of Electrical and Electronic Engineers, IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA), pp. 62-63, 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023, Niigata, Japan, 30/08/23. https://doi.org/10.1109/NVMSA58981.2023.00019

Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications. / Paasio, Ella; Prunnila, Mika; Majumdar, Sayani.
12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. IEEE Institute of Electrical and Electronic Engineers, 2023. p. 62-63 (IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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N2 - We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices. Such model is expected to be computationally efficient in circuit design with SPICE and Verilog-A. Our results represent an important advancement towards modelling of ferroelectric HZO capacitors for large-scale memory and neuromorphic circuit integration.

AB - We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices. Such model is expected to be computationally efficient in circuit design with SPICE and Verilog-A. Our results represent an important advancement towards modelling of ferroelectric HZO capacitors for large-scale memory and neuromorphic circuit integration.

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SN - 979-8-3503-4497-4

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Paasio E, Prunnila M, Majumdar S. Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications. In 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023. IEEE Institute of Electrical and Electronic Engineers. 2023. p. 62-63. (IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)). doi: 10.1109/NVMSA58981.2023.00019

Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications

Abstract

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Keywords

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Cite this

Modelling Ferroelectric Hysteresis of HZO Capacitor with Jiles-Atherton Model for Non-Volatile Memory Applications

Abstract

Publication series

Conference

Funding

Keywords

Access to Document

Other files and links

Fingerprint

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OtaNano

Cite this