Abstract
We report a ferroelectric model based on the Jiles-Atherton equations which can successfully reproduce the experimental polarization-voltage hysteresis of thin-film hafnium zirconium oxide (HZO) capacitor devices. Such model is expected to be computationally efficient in circuit design with SPICE and Verilog-A. Our results represent an important advancement towards modelling of ferroelectric HZO capacitors for large-scale memory and neuromorphic circuit integration.
| Original language | English |
|---|---|
| Title of host publication | 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 62-63 |
| ISBN (Electronic) | 979-8-3503-4496-7 |
| ISBN (Print) | 979-8-3503-4497-4 |
| DOIs | |
| Publication status | Published - 2023 |
| MoE publication type | A4 Article in a conference publication |
| Event | 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023 - Niigata, Japan Duration: 30 Aug 2023 → 1 Sept 2023 |
Publication series
| Series | IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA) |
|---|
Conference
| Conference | 12th IEEE Non-Volatile Memory Systems and Applications Symposium, NVMSA 2023 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 30/08/23 → 1/09/23 |
Funding
Authors acknowledge Academy of Finland (Grant no. 345068 and 350667) for financial support. The work used experimental facilities of Micronova National Research Infrastructure for Micro-and Nanotechnology.
Keywords
- Ferro electricity
- In-memory computing
- Jiles-Atherton model
- Memory
- Neuromorphic computing
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