Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures

Markku Ylilammi

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.
    Original languageEnglish
    Publication statusPublished - 2017
    Event5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 - Helsinki, Finland
    Duration: 30 Mar 2017 → …

    Seminar

    Seminar5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017
    CountryFinland
    CityHelsinki
    Period30/03/17 → …

    Fingerprint

    atomic layer epitaxy
    high aspect ratio
    surface reactions
    adsorption
    wafers
    propagation
    silicon
    coefficients

    Keywords

    • thin films
    • conformality
    • ALD
    • atomic layer deposition
    • high aspect ratio structures
    • mass transfer
    • diffusion
    • surface reactions

    Cite this

    Ylilammi, M. (2017). Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.
    Ylilammi, Markku. / Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.
    @conference{695596c1b025436281242ab1a1b2572b,
    title = "Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures",
    abstract = "The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.",
    keywords = "thin films, conformality, ALD, atomic layer deposition, high aspect ratio structures, mass transfer, diffusion, surface reactions",
    author = "Markku Ylilammi",
    year = "2017",
    language = "English",
    note = "5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 ; Conference date: 30-03-2017",

    }

    Ylilammi, M 2017, 'Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures', Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland, 30/03/17.

    Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. / Ylilammi, Markku.

    2017. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.

    Research output: Contribution to conferenceConference articleScientific

    TY - CONF

    T1 - Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures

    AU - Ylilammi, Markku

    PY - 2017

    Y1 - 2017

    N2 - The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.

    AB - The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.

    KW - thin films

    KW - conformality

    KW - ALD

    KW - atomic layer deposition

    KW - high aspect ratio structures

    KW - mass transfer

    KW - diffusion

    KW - surface reactions

    M3 - Conference article

    ER -

    Ylilammi M. Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. 2017. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.