Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.
    Original languageEnglish
    Publication statusPublished - 2017
    MoE publication typeNot Eligible
    Event5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 - Helsinki, Finland
    Duration: 30 Mar 2017 → …

    Seminar

    Seminar5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017
    CountryFinland
    CityHelsinki
    Period30/03/17 → …

    Keywords

    • thin films
    • conformality
    • ALD
    • atomic layer deposition
    • high aspect ratio structures
    • mass transfer
    • diffusion
    • surface reactions
    • OtaNano

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