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The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.
|Publication status||Published - 2017|
|MoE publication type||Not Eligible|
|Event||5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 - Helsinki, Finland|
Duration: 30 Mar 2017 → …
|Seminar||5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017|
|Period||30/03/17 → …|
- thin films
- atomic layer deposition
- high aspect ratio structures
- mass transfer
- surface reactions
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- 1 Finished
ALDCoE: Finnish Centre of Excellence in Atomic Layer Deposition
Ylivaara, O. M. E., Ahopelto, J., Puurunen, R. L. & Grigoras, K.
1/01/12 → 31/12/17
Project: Academy of Finland project