Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures

Markku Ylilammi

Research output: Contribution to conferenceConference articleScientific

Abstract

The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.
Original languageEnglish
Publication statusPublished - 2017
Event5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 - Helsinki, Finland
Duration: 30 Mar 2017 → …

Seminar

Seminar5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017
CountryFinland
CityHelsinki
Period30/03/17 → …

Fingerprint

atomic layer epitaxy
high aspect ratio
surface reactions
adsorption
wafers
propagation
silicon
coefficients

Keywords

  • thin films
  • conformality
  • ALD
  • atomic layer deposition
  • high aspect ratio structures
  • mass transfer
  • diffusion
  • surface reactions

Cite this

Ylilammi, M. (2017). Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.
Ylilammi, Markku. / Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.
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title = "Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures",
abstract = "The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.",
keywords = "thin films, conformality, ALD, atomic layer deposition, high aspect ratio structures, mass transfer, diffusion, surface reactions",
author = "Markku Ylilammi",
year = "2017",
language = "English",
note = "5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 ; Conference date: 30-03-2017",

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Ylilammi, M 2017, 'Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures' Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland, 30/03/17, .

Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. / Ylilammi, Markku.

2017. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.

Research output: Contribution to conferenceConference articleScientific

TY - CONF

T1 - Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures

AU - Ylilammi, Markku

PY - 2017

Y1 - 2017

N2 - The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.

AB - The conformality of ALD growth in narrow trenches is studied by using a long narrow lateral channel fabricated on a silicon wafer. The propagation of ALD growth in the channel is modeled by a diffusion process. The surface reaction is described by dynamic Langmuir adsorption. The film growth is calculated by solving the diffusion equation with surface reactions. Measured thickness distribution gives the equilibrium constant of adsorption and the sticking coefficient. Also the effect of channel narrowing due to film deposition is included in the model.

KW - thin films

KW - conformality

KW - ALD

KW - atomic layer deposition

KW - high aspect ratio structures

KW - mass transfer

KW - diffusion

KW - surface reactions

M3 - Conference article

ER -

Ylilammi M. Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures. 2017. Paper presented at 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017, Helsinki, Finland.