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Abstract
The conformality of ALD growth in narrow trenches is
studied by using a long narrow lateral channel fabricated
on a silicon wafer. The propagation of ALD growth in the
channel is modeled by a diffusion process. The surface
reaction is described by dynamic Langmuir adsorption. The
film growth is calculated by solving the diffusion
equation with surface reactions. Measured thickness
distribution gives the equilibrium constant of adsorption
and the sticking coefficient. Also the effect of channel
narrowing due to film deposition is included in the
model.
| Original language | English |
|---|---|
| Publication status | Published - 2017 |
| MoE publication type | Not Eligible |
| Event | 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 - Helsinki, Finland Duration: 30 Mar 2017 → … |
Seminar
| Seminar | 5th Annual seminar of ALD Centre of Excellence, ALDCoE Seminar 2017 |
|---|---|
| Country/Territory | Finland |
| City | Helsinki |
| Period | 30/03/17 → … |
Keywords
- thin films
- conformality
- ALD
- atomic layer deposition
- high aspect ratio structures
- mass transfer
- diffusion
- surface reactions
- OtaNano
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Dive into the research topics of 'Modelling of conformality of Atomic Layer Deposition in lateral high aspect ratio structures'. Together they form a unique fingerprint.Projects
- 1 Finished
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ALDCoE: Finnish Centre of Excellence in Atomic Layer Deposition
Ylivaara, O. M. E., Ahopelto, J., Puurunen, R. L. & Grigoras, K.
1/01/12 → 31/12/17
Project: Academy of Finland project