Modelling of dc characteristics for granular semiconductors

Aapo Varpula, Juha Sinkkonen, Sergey Novikov

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

4 Citations (Scopus)

Abstract

The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

Original languageEnglish
Article number014003
JournalPhysica Scripta T
VolumeT141
DOIs
Publication statusPublished - 1 Dec 2010
MoE publication typeA4 Article in a conference publication
Event23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland
Duration: 14 Jun 200917 Jun 2009

Fingerprint

Grain Boundary
Semiconductors
grain boundaries
Trapping
trapping
Modeling
Electronics
Drift-diffusion
n-type semiconductors
diffusion theory
electronics
Analytical Model
Voltage
Numerical Simulation
Numerical Results
electric potential
profiles
Range of data
simulation

Cite this

Varpula, Aapo ; Sinkkonen, Juha ; Novikov, Sergey. / Modelling of dc characteristics for granular semiconductors. In: Physica Scripta T. 2010 ; Vol. T141.
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Modelling of dc characteristics for granular semiconductors. / Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey.

In: Physica Scripta T, Vol. T141, 014003, 01.12.2010.

Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

TY - JOUR

T1 - Modelling of dc characteristics for granular semiconductors

AU - Varpula, Aapo

AU - Sinkkonen, Juha

AU - Novikov, Sergey

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

AB - The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.

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JO - Physica Scripta

JF - Physica Scripta

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