The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.
|Journal||Physica Scripta T|
|Publication status||Published - 1 Dec 2010|
|MoE publication type||A4 Article in a conference publication|
|Event||23rd Nordic Semiconductor Meeting, NSM 2009 - Reykjavik, Iceland|
Duration: 14 Jun 2009 → 17 Jun 2009