Abstract
This paper focuses on circuit simulation for thin film transistors that can be based on organic or inorganic metal-oxide materials and fabricated using solution processing such as printing or using the more conventional methods such as sputtering. In particular, the paper focuses on solution processed metal oxides. Existing compact device models are generalized in the article to include AC properties and statistical variations. Simulation results for a four-transistor flip-flop circuit are compared against measured characteristics to verify model predictions. The simulation tools will serve in building more complicated analogue and digital printed circuits.
Original language | English |
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Title of host publication | Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
ISBN (Print) | 978-1-4799-4026-4 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A4 Article in a conference publication |
Event | 5th Electronics System-Integration Technology Conference, ESTC 2014 - Helsinki, Finland Duration: 16 Sept 2014 → 18 Sept 2014 Conference number: 5th |
Conference
Conference | 5th Electronics System-Integration Technology Conference, ESTC 2014 |
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Abbreviated title | ESTC 2014 |
Country/Territory | Finland |
City | Helsinki |
Period | 16/09/14 → 18/09/14 |