Modelling of temperature dependence of a floating pad structure's RF properties

Tarja Riihisaari, Hannu Ronkainen, Hannu Kattelus, Hannu Hakojärvi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    Abstract

    Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.
    Original languageEnglish
    Title of host publicationSimulation of Semiconductor Processes and Devices 1998
    PublisherSpringer
    Pages30-33
    ISBN (Electronic)978-3-7091-6827-1
    ISBN (Print)978-3-7091-7415-9
    DOIs
    Publication statusPublished - 1998
    MoE publication typeB3 Non-refereed article in conference proceedings
    EventInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98 - Leuven, Belgium
    Duration: 2 Sep 19984 Sep 1998

    Conference

    ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98
    Country/TerritoryBelgium
    CityLeuven
    Period2/09/984/09/98

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