Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.
|Title of host publication||Simulation of Semiconductor Processes and Devices 1998|
|Publication status||Published - 1998|
|MoE publication type||B3 Non-refereed article in conference proceedings|
|Event||International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98 - Leuven, Belgium|
Duration: 2 Sep 1998 → 4 Sep 1998
|Conference||International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98|
|Period||2/09/98 → 4/09/98|