Modelling of temperature dependence of a floating pad structure's RF properties

Tarja Riihisaari; Hannu Ronkainen; Hannu Kattelus; Hannu Hakojärvi

doi:10.1007/978-3-7091-6827-1_9

Modelling of temperature dependence of a floating pad structure's RF properties

Tarja Riihisaari, Hannu Ronkainen, Hannu Kattelus, Hannu Hakojärvi

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.

Original language	English
Title of host publication	Simulation of Semiconductor Processes and Devices 1998
Publisher	Springer
Pages	30-33
ISBN (Electronic)	978-3-7091-6827-1
ISBN (Print)	978-3-7091-7415-9
DOIs	https://doi.org/10.1007/978-3-7091-6827-1_9
Publication status	Published - 1998
MoE publication type	B3 Non-refereed article in conference proceedings
Event	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98 - Leuven, Belgium Duration: 2 Sept 1998 → 4 Sept 1998

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98
Country/Territory	Belgium
City	Leuven
Period	2/09/98 → 4/09/98

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10.1007/978-3-7091-6827-1_9

Cite this

@inproceedings{d5e96fdd02f14aadbb0442aa457d8ea0,

title = "Modelling of temperature dependence of a floating pad structure's RF properties",

abstract = "Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.",

author = "Tarja Riihisaari and Hannu Ronkainen and Hannu Kattelus and Hannu Hakoj{\"a}rvi",

year = "1998",

doi = "10.1007/978-3-7091-6827-1\_9",

language = "English",

isbn = "978-3-7091-7415-9",

pages = "30--33",

booktitle = "Simulation of Semiconductor Processes and Devices 1998",

publisher = "Springer",

address = "Germany",

note = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98 ; Conference date: 02-09-1998 Through 04-09-1998",

}

Riihisaari, T, Ronkainen, H, Kattelus, H & Hakojärvi, H 1998, Modelling of temperature dependence of a floating pad structure's RF properties. in Simulation of Semiconductor Processes and Devices 1998. Springer, pp. 30-33, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98, Leuven, Belgium, 2/09/98. https://doi.org/10.1007/978-3-7091-6827-1_9

TY - GEN

T1 - Modelling of temperature dependence of a floating pad structure's RF properties

AU - Riihisaari, Tarja

AU - Ronkainen, Hannu

AU - Kattelus, Hannu

AU - Hakojärvi, Hannu

PY - 1998

Y1 - 1998

N2 - Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.

AB - Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.

U2 - 10.1007/978-3-7091-6827-1_9

DO - 10.1007/978-3-7091-6827-1_9

M3 - Conference article in proceedings

SN - 978-3-7091-7415-9

SP - 30

EP - 33

BT - Simulation of Semiconductor Processes and Devices 1998

PB - Springer

T2 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD '98

Y2 - 2 September 1998 through 4 September 1998

ER -

Modelling of temperature dependence of a floating pad structure's RF properties

Abstract

Conference

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