Modelling of the depleted p-JFET radiation detector

T. Tikkanen, Panu Jalas, M. Laakso, Kaj Grahn, Kari Leinonen

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The feasibility of a depleted junction field effect transistor (JFET) detector structure which is a combined radiation detector and low-noise charge readout transistor is studied computationally. The operating principle of the depleted p-JET detector incorporating a p-channel JFET structure processed on the surface of a high-resistivity n-type silicon chip is described. Results from two-dimensional potential and charge carrier concentration simulation of the structure indicate that the charge signal can be successfully read out by the FET provided that an appropriate doping profile shape is implemented in the device.
Original languageEnglish
Pages (from-to)1519-1522
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume39
Issue number5
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint

JFET
Radiation detectors
radiation detectors
Field effect transistors
detectors
low noise
Detectors
readout
charge carriers
transistors
field effect transistors
chips
Charge carriers
electrical resistivity
Carrier concentration
Transistors
silicon
profiles
Doping (additives)
Silicon

Cite this

Tikkanen, T., Jalas, P., Laakso, M., Grahn, K., & Leinonen, K. (1992). Modelling of the depleted p-JFET radiation detector. IEEE Transactions on Nuclear Science, 39(5), 1519-1522. https://doi.org/10.1109/23.173236
Tikkanen, T. ; Jalas, Panu ; Laakso, M. ; Grahn, Kaj ; Leinonen, Kari. / Modelling of the depleted p-JFET radiation detector. In: IEEE Transactions on Nuclear Science. 1992 ; Vol. 39, No. 5. pp. 1519-1522.
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Tikkanen, T, Jalas, P, Laakso, M, Grahn, K & Leinonen, K 1992, 'Modelling of the depleted p-JFET radiation detector', IEEE Transactions on Nuclear Science, vol. 39, no. 5, pp. 1519-1522. https://doi.org/10.1109/23.173236

Modelling of the depleted p-JFET radiation detector. / Tikkanen, T.; Jalas, Panu; Laakso, M.; Grahn, Kaj; Leinonen, Kari.

In: IEEE Transactions on Nuclear Science, Vol. 39, No. 5, 1992, p. 1519-1522.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Laakso, M.

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AU - Leinonen, Kari

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AB - The feasibility of a depleted junction field effect transistor (JFET) detector structure which is a combined radiation detector and low-noise charge readout transistor is studied computationally. The operating principle of the depleted p-JET detector incorporating a p-channel JFET structure processed on the surface of a high-resistivity n-type silicon chip is described. Results from two-dimensional potential and charge carrier concentration simulation of the structure indicate that the charge signal can be successfully read out by the FET provided that an appropriate doping profile shape is implemented in the device.

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