Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

5 Citations (Scopus)

Abstract

Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.
Original languageEnglish
Title of host publicationConference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages97-100
Number of pages4
ISBN (Print)0-7803-3166-4
DOIs
Publication statusPublished - 1996
MoE publication typeA4 Article in a conference publication

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tunnel diodes
molecular beam epitaxy
cells
emitters
solar cells
diodes
gases

Cite this

Lammasniemi, J., Tappura, K., Jaakkola, R., Kazantsev, A., Rakennus, K., Uusimaa, P., & Pessa, M. (1996). Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (pp. 97-100). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/PVSC.1996.563956
Lammasniemi, J. ; Tappura, K. ; Jaakkola, R. ; Kazantsev, A. ; Rakennus, K. ; Uusimaa, P. ; Pessa, M. / Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers , 1996. pp. 97-100
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title = "Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications",
abstract = "Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0{\%} for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.",
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Lammasniemi, J, Tappura, K, Jaakkola, R, Kazantsev, A, Rakennus, K, Uusimaa, P & Pessa, M 1996, Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers , pp. 97-100. https://doi.org/10.1109/PVSC.1996.563956

Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. / Lammasniemi, J.; Tappura, K.; Jaakkola, R.; Kazantsev, A.; Rakennus, K.; Uusimaa, P.; Pessa, M.

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers , 1996. p. 97-100.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

AB - Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

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Lammasniemi J, Tappura K, Jaakkola R, Kazantsev A, Rakennus K, Uusimaa P et al. Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers . 1996. p. 97-100 https://doi.org/10.1109/PVSC.1996.563956