Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

J. Lammasniemi; K. Tappura; R. Jaakkola; A. Kazantsev; K. Rakennus; P. Uusimaa; M. Pessa

doi:10.1109/PVSC.1996.563956

Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

J. Lammasniemi, K. Tappura, R. Jaakkola, A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa

Not published at VTT

Tampere University of Technology (TUT)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

Original language	English
Title of host publication	Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	97-100
Number of pages	4
ISBN (Print)	0-7803-3166-4
DOIs	https://doi.org/10.1109/PVSC.1996.563956
Publication status	Published - 1996
MoE publication type	A4 Article in a conference publication

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10.1109/PVSC.1996.563956

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Lammasniemi, J., Tappura, K., Jaakkola, R., Kazantsev, A., Rakennus, K., Uusimaa, P., & Pessa, M. (1996). Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (pp. 97-100). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/PVSC.1996.563956

@inproceedings{1f711d0351294f7ba0228a388aab7d67,

title = "Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications",

abstract = "Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.",

author = "J. Lammasniemi and K. Tappura and R. Jaakkola and A. Kazantsev and K. Rakennus and P. Uusimaa and M. Pessa",

year = "1996",

doi = "10.1109/PVSC.1996.563956",

language = "English",

isbn = "0-7803-3166-4",

pages = "97--100",

booktitle = "Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Lammasniemi, J, Tappura, K, Jaakkola, R, Kazantsev, A, Rakennus, K, Uusimaa, P & Pessa, M 1996, Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers, pp. 97-100. https://doi.org/10.1109/PVSC.1996.563956

Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications. / Lammasniemi, J.; Tappura, K.; Jaakkola, R. et al.
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE Institute of Electrical and Electronic Engineers, 1996. p. 97-100.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

AU - Lammasniemi, J.

AU - Tappura, K.

AU - Jaakkola, R.

AU - Kazantsev, A.

AU - Rakennus, K.

AU - Uusimaa, P.

AU - Pessa, M.

PY - 1996

Y1 - 1996

N2 - Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

AB - Ga/sub 0.51/In/sub 0.49/P solar cells and GaAs tunnel diodes were grown by gas-source molecular beam epitaxy. The effect of various window layer materials, such as Al/sub 0.51/In/sub 0.49/P, Al/sub 0.8/Ga/sub 0.2/As and ZnSe were studied for n-on-p Ga/sub 0.51/In/sub 0.49/P cells. The best carrier collection was obtained with Al/sub 0.51/In/sub 0.49/P window and with graded doping in emitter and base layers. A total-area AM0 efficiency of 14.0% for 2/spl times/2 cm/sup 2/ area has been measured for this cell. The GaAs tunnel diodes were grown with Be-doping for p-type and Si-doping for n-type material. Specific resistance of 0.09 m/spl Omega/cm/sup 2/ and peak tunneling current of 200 A/cm/sup 2/ were obtained for the best GaAs tunnel diodes. In addition, tunneling effect in a n++Ga/sub 0.51/In/sub 0.49/P/p++GaAs diode was observed.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030383293&partnerID=MN8TOARS

U2 - 10.1109/PVSC.1996.563956

DO - 10.1109/PVSC.1996.563956

M3 - Conference article in proceedings

SN - 0-7803-3166-4

SP - 97

EP - 100

BT - Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications

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