Molecular field-effect transistors using conducting polymer langmuir-blodgett films

Jari Paloheimo, Pekka Kuivalainen, Henrik Stubb, E. Vuorimaa, Paula Yli-Lahti

Research output: Contribution to journalArticleScientificpeer-review

261 Citations (Scopus)


Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.
Original languageEnglish
Pages (from-to)1157-1159
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed


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