Molecular field-effect transistors using conducting polymer langmuir-blodgett films

Jari Paloheimo, Pekka Kuivalainen, Henrik Stubb, E. Vuorimaa, Paula Yli-Lahti

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Abstract

Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.
Original languageEnglish
Pages (from-to)1157-1159
JournalApplied Physics Letters
Volume56
Issue number12
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

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    Paloheimo, J., Kuivalainen, P., Stubb, H., Vuorimaa, E., & Yli-Lahti, P. (1990). Molecular field-effect transistors using conducting polymer langmuir-blodgett films. Applied Physics Letters, 56(12), 1157-1159. https://doi.org/10.1063/1.103182