Molecular field-effect transistors using conducting polymer langmuir-blodgett films

Jari Paloheimo; Pekka Kuivalainen; Henrik Stubb; E. Vuorimaa; Paula Yli-Lahti

doi:10.1063/1.103182

Molecular field-effect transistors using conducting polymer langmuir-blodgett films

Jari Paloheimo, Pekka Kuivalainen, Henrik Stubb, E. Vuorimaa, Paula Yli-Lahti

VTT Technical Research Centre of Finland

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

261 Citations (Scopus)

Abstract

Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.

Original language	English
Pages (from-to)	1157-1159
Journal	Applied Physics Letters
Volume	56
Issue number	12
DOIs	https://doi.org/10.1063/1.103182
Publication status	Published - 1990
MoE publication type	A1 Journal article-refereed

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title = "Molecular field-effect transistors using conducting polymer langmuir-blodgett films",

abstract = "Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.",

author = "Jari Paloheimo and Pekka Kuivalainen and Henrik Stubb and E. Vuorimaa and Paula Yli-Lahti",

year = "1990",

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T1 - Molecular field-effect transistors using conducting polymer langmuir-blodgett films

AU - Paloheimo, Jari

AU - Kuivalainen, Pekka

AU - Stubb, Henrik

AU - Vuorimaa, E.

AU - Yli-Lahti, Paula

PY - 1990

Y1 - 1990

N2 - Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.

AB - Thin‐film field‐effect transistors (FETs) have been prepared using poly(3‐hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.

U2 - 10.1063/1.103182

DO - 10.1063/1.103182

M3 - Article

SN - 0003-6951

VL - 56

SP - 1157

EP - 1159

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Molecular field-effect transistors using conducting polymer langmuir-blodgett films

Abstract

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