Molecular heterostructure devices composed of Langmuir-Blodgett films of conducting polymers

Eero Punkka, Michael Rubner

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)

Abstract

Organic heterostructures have been fabricated by alternating the deposition of monoand multilayers of undoped poly(3-hexylthiophene) and doped polypyrrole prepared by the Langmuir-Blodgett technique.
The dopant profiles of the structures have been electrically characterized by incorporating the polymer layers as the active semiconductive material into metal-insulator-semiconductor and Schottky barrier device configurations. The dopant concentrations were evaluated by capacitance-voltage measurements.
The results indicate modulated dopant profiles and a possible transfer of dopants. The dopant concentrations differ by about an order of magnitude between the undoped and doped layers.
The Schottky barriers become thinner the closer the doped polypyrrole monolayer lies to the Schottky electrode.
Original languageEnglish
Pages (from-to)1057-1063
JournalJournal of Electronic Materials
Volume21
Issue number11
DOIs
Publication statusPublished - 1992
MoE publication typeA1 Journal article-refereed

Fingerprint

Langmuir Blodgett films
polypyrroles
Conducting polymers
conducting polymers
Langmuir-Blodgett films
Heterojunctions
Doping (additives)
MIS (semiconductors)
profiles
electrical measurement
Polypyrroles
capacitance
electrodes
polymers
configurations
Capacitance measurement
Voltage measurement
Monolayers
Polymers
Multilayers

Cite this

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title = "Molecular heterostructure devices composed of Langmuir-Blodgett films of conducting polymers",
abstract = "Organic heterostructures have been fabricated by alternating the deposition of monoand multilayers of undoped poly(3-hexylthiophene) and doped polypyrrole prepared by the Langmuir-Blodgett technique. The dopant profiles of the structures have been electrically characterized by incorporating the polymer layers as the active semiconductive material into metal-insulator-semiconductor and Schottky barrier device configurations. The dopant concentrations were evaluated by capacitance-voltage measurements. The results indicate modulated dopant profiles and a possible transfer of dopants. The dopant concentrations differ by about an order of magnitude between the undoped and doped layers. The Schottky barriers become thinner the closer the doped polypyrrole monolayer lies to the Schottky electrode.",
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Molecular heterostructure devices composed of Langmuir-Blodgett films of conducting polymers. / Punkka, Eero; Rubner, Michael.

In: Journal of Electronic Materials, Vol. 21, No. 11, 1992, p. 1057-1063.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Molecular heterostructure devices composed of Langmuir-Blodgett films of conducting polymers

AU - Punkka, Eero

AU - Rubner, Michael

N1 - Project code: PUO2021

PY - 1992

Y1 - 1992

N2 - Organic heterostructures have been fabricated by alternating the deposition of monoand multilayers of undoped poly(3-hexylthiophene) and doped polypyrrole prepared by the Langmuir-Blodgett technique. The dopant profiles of the structures have been electrically characterized by incorporating the polymer layers as the active semiconductive material into metal-insulator-semiconductor and Schottky barrier device configurations. The dopant concentrations were evaluated by capacitance-voltage measurements. The results indicate modulated dopant profiles and a possible transfer of dopants. The dopant concentrations differ by about an order of magnitude between the undoped and doped layers. The Schottky barriers become thinner the closer the doped polypyrrole monolayer lies to the Schottky electrode.

AB - Organic heterostructures have been fabricated by alternating the deposition of monoand multilayers of undoped poly(3-hexylthiophene) and doped polypyrrole prepared by the Langmuir-Blodgett technique. The dopant profiles of the structures have been electrically characterized by incorporating the polymer layers as the active semiconductive material into metal-insulator-semiconductor and Schottky barrier device configurations. The dopant concentrations were evaluated by capacitance-voltage measurements. The results indicate modulated dopant profiles and a possible transfer of dopants. The dopant concentrations differ by about an order of magnitude between the undoped and doped layers. The Schottky barriers become thinner the closer the doped polypyrrole monolayer lies to the Schottky electrode.

U2 - 10.1007/BF02665884

DO - 10.1007/BF02665884

M3 - Article

VL - 21

SP - 1057

EP - 1063

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

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