Monolayer thickness in atomic layer deposition

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    108 Citations (Scopus)

    Abstract

    The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.
    Original languageEnglish
    Pages (from-to)124-130
    Number of pages7
    JournalThin Solid Films
    Volume279
    Issue number1-2
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

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