Monolayer thickness in atomic layer deposition

Markku Ylilammi

    Research output: Contribution to journalArticleScientificpeer-review

    106 Citations (Scopus)

    Abstract

    The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.
    Original languageEnglish
    Pages (from-to)124-130
    Number of pages7
    JournalThin Solid Films
    Volume279
    Issue number1-2
    DOIs
    Publication statusPublished - 1996
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    atomic layer epitaxy
    Monolayers
    Atomic layer epitaxy
    Adsorption
    adsorption
    Surface reactions
    Sulfides
    Chemisorption
    Fluorides
    chemisorption
    Oxides
    surface reactions
    fluorides
    sulfides
    Thin films
    cycles
    Molecules
    oxides
    Geometry

    Cite this

    Ylilammi, Markku. / Monolayer thickness in atomic layer deposition. In: Thin Solid Films. 1996 ; Vol. 279, No. 1-2. pp. 124-130.
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    Monolayer thickness in atomic layer deposition. / Ylilammi, Markku.

    In: Thin Solid Films, Vol. 279, No. 1-2, 1996, p. 124-130.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Monolayer thickness in atomic layer deposition

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    PY - 1996

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    N2 - The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.

    AB - The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.

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    DO - 10.1016/0040-6090(95)08159-3

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    JF - Thin Solid Films

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