Monolayer thickness in atomic layer deposition

Markku Ylilammi

Research output: Contribution to journalArticleScientificpeer-review

106 Citations (Scopus)

Abstract

The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.
Original languageEnglish
Pages (from-to)124-130
Number of pages7
JournalThin Solid Films
Volume279
Issue number1-2
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Atomic layer deposition
atomic layer epitaxy
Monolayers
Atomic layer epitaxy
Adsorption
adsorption
Surface reactions
Sulfides
Chemisorption
Fluorides
chemisorption
Oxides
surface reactions
fluorides
sulfides
Thin films
cycles
Molecules
oxides
Geometry

Cite this

Ylilammi, Markku. / Monolayer thickness in atomic layer deposition. In: Thin Solid Films. 1996 ; Vol. 279, No. 1-2. pp. 124-130.
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Monolayer thickness in atomic layer deposition. / Ylilammi, Markku.

In: Thin Solid Films, Vol. 279, No. 1-2, 1996, p. 124-130.

Research output: Contribution to journalArticleScientificpeer-review

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N2 - The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.

AB - The growth rate in atomic layer deposition (ALD) or epitaxy (ALE) is usually saturated to a constant level when appropriate operation conditions are attained. The layer thickness deposited in one cycle is limited by adsorption. A simple molecular description for chemisorption and surface reactions is suggested and shows that both reaction steps have an effect on the growth rate. A model is developed for the calculation of the growth rate from the geometry of the reactant molecules and the density of the adsorption sites on the surface. The results are compared with experimental values of binary oxide, sulphide and fluoride thin films. In most cases, a surface configuration is found that gives the observed growth rate.

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