@inproceedings{4c48ba76c71e40a196ee04151acdaf53,
title = "Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes",
abstract = "Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (~0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.",
author = "Timo Aalto and Tapani Vehmas and Markku Kapulainen and P{\"a}ivi Heimala and Giovanni Delrosso and Fei Sun and Feng Gao",
year = "2020",
doi = "10.1149/09805.0303ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society ECS",
number = "5",
pages = "303--313",
editor = "Q. Liu and Hartmann, {J. M.} and Holt, {J. R.} and X. Gong and V. Jain and G. Niu and G. Masini and A. Ogura and S. Miyazaki and M. Ostling and W. Bi and A. Schulze and A. Mai",
booktitle = "PRiME 2020",
address = "United States",
note = "Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",
}