Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

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Abstract

Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (~0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.

Original languageEnglish
Title of host publicationPRiME 2020
Subtitle of host publicationSiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
EditorsQ. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
PublisherElectrochemical Society ECS
Pages303-313
ISBN (Electronic)978-1-60768-539-5
DOIs
Publication statusPublished - 2020
MoE publication typeA4 Article in a conference publication
EventPacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States
Duration: 4 Oct 20209 Oct 2020

Publication series

SeriesECS Transactions
Number5
Volume98
ISSN1938-5862

Conference

ConferencePacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
CountryUnited States
CityHonolulu
Period4/10/209/10/20

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