Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

Timo Aalto; Tapani Vehmas; Markku Kapulainen; Päivi Heimala; Giovanni Delrosso; Fei Sun; Feng Gao

doi:10.1149/09805.0303ecst

Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

Timo Aalto
, Tapani Vehmas
, Markku Kapulainen
, Päivi Heimala
, Giovanni Delrosso
, Fei Sun
, Feng Gao

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

4 Citations (Scopus)

Abstract

Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (~0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
Editors	Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
Publisher	Electrochemical Society ECS
Pages	303-313
ISBN (Electronic)	9781607689003
DOIs	https://doi.org/10.1149/09805.0303ecst
Publication status	Published - 2020
MoE publication type	A4 Article in a conference publication
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 4 Oct 2020 → 9 Oct 2020

Publication series

Series	ECS Transactions
Number	5
Volume	98
ISSN	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	4/10/20 → 9/10/20

Funding

This work was carried out in the RAPSI and OPEC projects, which were funded by Business Finland (formerly Tekes), the Finnish Funding Agency for Innovation (grant agreement numbers 922/31/2018 and 2814/31/2015, respectively). The work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), decision 320168.

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10.1149/09805.0303ecst

Cite this

Aalto, T., Vehmas, T., Kapulainen, M., Heimala, P., Delrosso, G., Sun, F., & Gao, F. (2020). Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes. In Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, & A. Mai (Eds.), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (pp. 303-313). Electrochemical Society ECS. https://doi.org/10.1149/09805.0303ecst

Aalto, Timo ; Vehmas, Tapani ; Kapulainen, Markku et al. / Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes. PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. editor / Q. Liu ; J. M. Hartmann ; J. R. Holt ; X. Gong ; V. Jain ; G. Niu ; G. Masini ; A. Ogura ; S. Miyazaki ; M. Ostling ; W. Bi ; A. Schulze ; A. Mai. Electrochemical Society ECS, 2020. pp. 303-313 (ECS Transactions; No. 5, Vol. 98).

@inproceedings{4c48ba76c71e40a196ee04151acdaf53,

title = "Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes",

abstract = "Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (\textasciitilde{}0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.",

author = "Timo Aalto and Tapani Vehmas and Markku Kapulainen and P{\"a}ivi Heimala and Giovanni Delrosso and Fei Sun and Feng Gao",

year = "2020",

doi = "10.1149/09805.0303ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society ECS",

number = "5",

pages = "303--313",

editor = "Q. Liu and Hartmann, \{J. M.\} and Holt, \{J. R.\} and X. Gong and V. Jain and G. Niu and G. Masini and A. Ogura and S. Miyazaki and M. Ostling and W. Bi and A. Schulze and A. Mai",

booktitle = "PRiME 2020",

address = "United States",

note = "Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

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Aalto, T , Vehmas, T , Kapulainen, M , Heimala, P, Delrosso, G, Sun, F & Gao, F 2020, Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes. in Q Liu, JM Hartmann, JR Holt, X Gong, V Jain, G Niu, G Masini, A Ogura, S Miyazaki, M Ostling, W Bi, A Schulze & A Mai (eds), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Electrochemical Society ECS, ECS Transactions, no. 5, vol. 98, pp. 303-313, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 4/10/20. https://doi.org/10.1149/09805.0303ecst

Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes. / Aalto, Timo ; Vehmas, Tapani ; Kapulainen, Markku et al.
PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. ed. / Q. Liu; J. M. Hartmann; J. R. Holt; X. Gong; V. Jain; G. Niu; G. Masini; A. Ogura; S. Miyazaki; M. Ostling; W. Bi; A. Schulze; A. Mai. Electrochemical Society ECS, 2020. p. 303-313 (ECS Transactions; No. 5, Vol. 98).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

AU - Aalto, Timo

AU - Vehmas, Tapani

AU - Kapulainen, Markku

AU - Heimala, Päivi

AU - Delrosso, Giovanni

AU - Sun, Fei

AU - Gao, Feng

PY - 2020

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N2 - Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (~0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.

AB - Ge photodiodes were integrated on the 3 µm SOI platform, where the 3 µm thick Si waveguides offer ultra-low propagation losses (~0.1 dB/cm), ultra-dense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence) and the ability to tolerate relatively high optical powers (>1W). A horizontal Ge PIN photodiode was monolithically integrated on the 3 µm SOI platform. It reached a 3 dB cutoff frequency of 40 GHz and 1.0 A/W responsivity at -1 V bias and 1.55 µm wavelength. Germanium was selectively grown into cavities in the 3 µm SOI layer and the Ge waveguide detector was patterned with the same hard mask with the Si waveguides to achieve waveguide self-alignment. The development of 40 GHz PDs was an important step in improving the feasibility of the 3 µm SOI platform in high-bandwidth applications.

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EP - 313

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A2 - Liu, Q.

A2 - Hartmann, J. M.

A2 - Holt, J. R.

A2 - Gong, X.

A2 - Jain, V.

A2 - Niu, G.

A2 - Masini, G.

A2 - Ogura, A.

A2 - Miyazaki, S.

A2 - Ostling, M.

A2 - Bi, W.

A2 - Schulze, A.

A2 - Mai, A.

PB - Electrochemical Society ECS

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Aalto T , Vehmas T , Kapulainen M , Heimala P, Delrosso G, Sun F et al. Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes. In Liu Q, Hartmann JM, Holt JR, Gong X, Jain V, Niu G, Masini G, Ogura A, Miyazaki S, Ostling M, Bi W, Schulze A, Mai A, editors, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. Electrochemical Society ECS. 2020. p. 303-313. (ECS Transactions; No. 5, Vol. 98). doi: 10.1149/09805.0303ecst

Monolithic Ge integration on the 3 µm SOI platform for 40 GHz photodiodes

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