Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

R. Malmqvist, C. Samuelsson, A. Gustafsson, D. Smith, Tauno Vähä-Heikkilä, R. Baggen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

6 Citations (Scopus)

Abstract

Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages148-151
ISBN (Electronic)978-1-61284-965-2
ISBN (Print)978-1-61284-963-8, 978-1-61284-964-5
DOIs
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
Event2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011 - Sitges, Spain
Duration: 15 Sep 201116 Sep 2011

Conference

Conference2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011
Abbreviated titleIMWS 2011
CountrySpain
CitySitges
Period15/09/1116/09/11

Fingerprint

Monolithic microwave integrated circuits
Foundries
Millimeter waves
MEMS
Switches
Networks (circuits)
Phase shifters
Insertion losses
Phase shift

Keywords

  • Low noise amplifiers
  • MMIC
  • radio frequency microelectromechanical systems
  • switches

Cite this

Malmqvist, R., Samuelsson, C., Gustafsson, A., Smith, D., Vähä-Heikkilä, T., & Baggen, R. (2011). Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. In Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011 (pp. 148-151). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/IMWS3.2011.6061861
Malmqvist, R. ; Samuelsson, C. ; Gustafsson, A. ; Smith, D. ; Vähä-Heikkilä, Tauno ; Baggen, R. / Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers , 2011. pp. 148-151
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title = "Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology",
abstract = "Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies",
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Malmqvist, R, Samuelsson, C, Gustafsson, A, Smith, D, Vähä-Heikkilä, T & Baggen, R 2011, Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. in Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers , pp. 148-151, 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011, Sitges, Spain, 15/09/11. https://doi.org/10.1109/IMWS3.2011.6061861

Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. / Malmqvist, R.; Samuelsson, C.; Gustafsson, A.; Smith, D.; Vähä-Heikkilä, Tauno; Baggen, R.

Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers , 2011. p. 148-151.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Gustafsson, A.

AU - Smith, D.

AU - Vähä-Heikkilä, Tauno

AU - Baggen, R.

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N2 - Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies

AB - Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies

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KW - switches

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Malmqvist R, Samuelsson C, Gustafsson A, Smith D, Vähä-Heikkilä T, Baggen R. Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. In Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers . 2011. p. 148-151 https://doi.org/10.1109/IMWS3.2011.6061861