Abstract
Wideband millimeter-wave RF-MEMS switch networks and
active RF circuits have been monolithically integrated on
the same GaAs wafer using an MMIC foundry process
technology. GaAs MEMS SPST and SPDT switches present
below 1 dB of insertion loss and more than 8 dB/20 dB of
isolation up to 75 GHz and 40 GHz, respectively. A
compact 1-bit Ka-band GaAs MEMS phase shifter circuit
achieve a high figure-of-merit with respect to low
in-band losses for a given phase shift. The demonstrated
on-wafer integration of two wideband LNAs further show
the capabilities of realizing highly integrated
(single-chip) reconfigurable active RF-MEMS based MMICs
and front-ends at millimeter-wave frequencies
Original language | English |
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Title of host publication | Proceedings |
Subtitle of host publication | IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 148-151 |
ISBN (Electronic) | 978-1-61284-965-2 |
ISBN (Print) | 978-1-61284-963-8, 978-1-61284-964-5 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A4 Article in a conference publication |
Event | 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011 - Sitges, Spain Duration: 15 Sept 2011 → 16 Sept 2011 |
Conference
Conference | 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011 |
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Abbreviated title | IMWS 2011 |
Country/Territory | Spain |
City | Sitges |
Period | 15/09/11 → 16/09/11 |
Keywords
- Low noise amplifiers
- MMIC
- radio frequency microelectromechanical systems
- switches