Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

R. Malmqvist; C. Samuelsson; A. Gustafsson; D. Smith; Tauno Vähä-Heikkilä; R. Baggen

doi:10.1109/IMWS3.2011.6061861

Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

R. Malmqvist
, C. Samuelsson
, A. Gustafsson
, D. Smith
, Tauno Vähä-Heikkilä
, R. Baggen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

8 Citations (Scopus)

Abstract

Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	148-151
ISBN (Electronic)	978-1-61284-965-2
ISBN (Print)	978-1-61284-963-8, 978-1-61284-964-5
DOIs	https://doi.org/10.1109/IMWS3.2011.6061861
Publication status	Published - 2011
MoE publication type	A4 Article in a conference publication
Event	2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011 - Sitges, Spain Duration: 15 Sept 2011 → 16 Sept 2011

Conference

Conference	2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011
Abbreviated title	IMWS 2011
Country/Territory	Spain
City	Sitges
Period	15/09/11 → 16/09/11

Keywords

Low noise amplifiers
MMIC
radio frequency microelectromechanical systems
switches

Access to Document

10.1109/IMWS3.2011.6061861

Cite this

Malmqvist, R., Samuelsson, C., Gustafsson, A., Smith, D., Vähä-Heikkilä, T., & Baggen, R. (2011). Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. In Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011 (pp. 148-151). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/IMWS3.2011.6061861

Malmqvist, R. ; Samuelsson, C. ; Gustafsson, A. et al. / Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers, 2011. pp. 148-151

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title = "Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology",

abstract = "Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies",

keywords = "Low noise amplifiers, MMIC, radio frequency microelectromechanical systems, switches",

author = "R. Malmqvist and C. Samuelsson and A. Gustafsson and D. Smith and Tauno V{\"a}h{\"a}-Heikkil{\"a} and R. Baggen",

year = "2011",

doi = "10.1109/IMWS3.2011.6061861",

language = "English",

isbn = "978-1-61284-963-8",

pages = "148--151",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011, IMWS 2011 ; Conference date: 15-09-2011 Through 16-09-2011",

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Malmqvist, R, Samuelsson, C, Gustafsson, A, Smith, D, Vähä-Heikkilä, T & Baggen, R 2011, Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. in Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers, pp. 148-151, 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011, Sitges, Spain, 15/09/11. https://doi.org/10.1109/IMWS3.2011.6061861

Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. / Malmqvist, R.; Samuelsson, C.; Gustafsson, A. et al.
Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers, 2011. p. 148-151.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Malmqvist, R.

AU - Samuelsson, C.

AU - Gustafsson, A.

AU - Smith, D.

AU - Vähä-Heikkilä, Tauno

AU - Baggen, R.

PY - 2011

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N2 - Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies

AB - Wideband millimeter-wave RF-MEMS switch networks and active RF circuits have been monolithically integrated on the same GaAs wafer using an MMIC foundry process technology. GaAs MEMS SPST and SPDT switches present below 1 dB of insertion loss and more than 8 dB/20 dB of isolation up to 75 GHz and 40 GHz, respectively. A compact 1-bit Ka-band GaAs MEMS phase shifter circuit achieve a high figure-of-merit with respect to low in-band losses for a given phase shift. The demonstrated on-wafer integration of two wideband LNAs further show the capabilities of realizing highly integrated (single-chip) reconfigurable active RF-MEMS based MMICs and front-ends at millimeter-wave frequencies

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KW - radio frequency microelectromechanical systems

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T2 - 2011 IEEE MTT-S International Microwave Workshop on Millimeter Wave Integration Technologies, IMWS 2011, Collocated with the 2011 IEEE RFID - Technologies and Applications Conference, RFID-TA 2011

Y2 - 15 September 2011 through 16 September 2011

ER -

Malmqvist R, Samuelsson C, Gustafsson A, Smith D, Vähä-Heikkilä T, Baggen R. Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology. In Proceedings: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Integration Technologies, IMWS 2011. IEEE Institute of Electrical and Electronic Engineers. 2011. p. 148-151 doi: 10.1109/IMWS3.2011.6061861

Monolithic integration of millimeter-wave RF-MEMS switch circuits and LNAs using a GaAs MMIC foundry process technology

Abstract

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Keywords

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