Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula, Markku Åberg, Jyrki Kiihamäki, Hannu Ronkainen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

10 Citations (Scopus)

Abstract

We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.
Original languageEnglish
Title of host publicationESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages611-614
ISBN (Print)0-7803-7995-0
DOIs
Publication statusPublished - 2003
MoE publication typeB3 Non-refereed article in conference proceedings
Event29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal
Duration: 16 Sep 200318 Sep 2003
Conference number: 29

Conference

Conference29th European Solid-State Circuits Conference, ESSCIRC 2003
Abbreviated titleESSCIRC 2003
CountryPortugal
CityEstoril
Period16/09/0318/09/03

Keywords

  • capacitive pressure sensor
  • MEMS

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