Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula, Markku Åberg, Jyrki Kiihamäki, Hannu Ronkainen

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

    10 Citations (Scopus)

    Abstract

    We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.
    Original languageEnglish
    Title of host publicationESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages611-614
    ISBN (Print)0-7803-7995-0
    DOIs
    Publication statusPublished - 2003
    MoE publication typeB3 Non-refereed article in conference proceedings
    Event29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal
    Duration: 16 Sep 200318 Sep 2003
    Conference number: 29

    Conference

    Conference29th European Solid-State Circuits Conference, ESSCIRC 2003
    Abbreviated titleESSCIRC 2003
    Country/TerritoryPortugal
    CityEstoril
    Period16/09/0318/09/03

    Keywords

    • capacitive pressure sensor
    • MEMS

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