Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula; Markku Åberg; Jyrki Kiihamäki; Hannu Ronkainen

doi:10.1109/ESSCIRC.2003.1257209

Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Miikka Ylimaula, Markku Åberg, Jyrki Kiihamäki, Hannu Ronkainen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

11 Citations (Scopus)

Abstract

We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

Original language	English
Title of host publication	ESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	611-614
ISBN (Print)	0-7803-7995-0
DOIs	https://doi.org/10.1109/ESSCIRC.2003.1257209
Publication status	Published - 2003
MoE publication type	B3 Non-refereed article in conference proceedings
Event	29th European Solid-State Circuits Conference, ESSCIRC 2003 - Estoril, Portugal Duration: 16 Sept 2003 → 18 Sept 2003 Conference number: 29

Conference

Conference	29th European Solid-State Circuits Conference, ESSCIRC 2003
Abbreviated title	ESSCIRC 2003
Country/Territory	Portugal
City	Estoril
Period	16/09/03 → 18/09/03

Keywords

capacitive pressure sensor
MEMS

Access to Document

10.1109/ESSCIRC.2003.1257209

Cite this

@inproceedings{8fe2a0562fcf4e8cacc9812e33f30fd6,

title = "Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit",

abstract = "We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.",

keywords = "capacitive pressure sensor, MEMS",

author = "Miikka Ylimaula and Markku {\AA}berg and Jyrki Kiiham{\"a}ki and Hannu Ronkainen",

note = "Based on poster Project code: T2SU00165; 29th European Solid-State Circuits Conference, ESSCIRC 2003, ESSCIRC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",

year = "2003",

doi = "10.1109/ESSCIRC.2003.1257209",

language = "English",

isbn = "0-7803-7995-0",

pages = "611--614",

booktitle = "ESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Ylimaula, M, Åberg, M, Kiihamäki, J & Ronkainen, H 2003, Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit. in ESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference. IEEE Institute of Electrical and Electronic Engineers, pp. 611-614, 29th European Solid-State Circuits Conference, ESSCIRC 2003, Estoril, Portugal, 16/09/03. https://doi.org/10.1109/ESSCIRC.2003.1257209

Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit. / Ylimaula, Miikka; Åberg, Markku; Kiihamäki, Jyrki et al.
ESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference. IEEE Institute of Electrical and Electronic Engineers, 2003. p. 611-614.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

TY - GEN

T1 - Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

AU - Ylimaula, Miikka

AU - Åberg, Markku

AU - Kiihamäki, Jyrki

AU - Ronkainen, Hannu

N1 - Conference code: 29

PY - 2003

Y1 - 2003

N2 - We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

AB - We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

KW - capacitive pressure sensor

KW - MEMS

U2 - 10.1109/ESSCIRC.2003.1257209

DO - 10.1109/ESSCIRC.2003.1257209

M3 - Conference article in proceedings

SN - 0-7803-7995-0

SP - 611

EP - 614

BT - ESSCIRC 2003, Proceedings of the 29th European Solid-State Circuits Conference

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 29th European Solid-State Circuits Conference, ESSCIRC 2003

Y2 - 16 September 2003 through 18 September 2003

ER -

Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Abstract

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Keywords

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