Monolithically integrated microspectrometer-on-chip based on tunable visible light MEMS FPI

Anna Rissanen (Corresponding Author), Uula Kantojärvi, Martti Blomberg, Jarkko Antila, Simo Eränen

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    We present a novel microspectrometer-on-chip for the visible spectral region, consisting of a tunable MEMS Fabry-Perot interferometer (FPI) monolithically integrated on a PIN photodiode using IC compatible microfabrication techniques. MEMS FPI is an electrostatically (AC voltage) actuated structure consisting of two parallel atomic layer deposited Bragg mirror stacks of Al2O3/TiO2 with imbedded circular aluminum electrodes on top and the bottom for capacitive tuning capability for the wavelength range of 420–550 nm. The fabrication process flow for the successful completion of the device is presented. The spectral response of the device ranges from 0.1 A/W at λ = 420 nm to 0.2 A/W at λ = 550 nm, with transmission peak width of 8 nm at 540 nm. These results indicate photodiode performance that matches the sensitivity levels typical for commercially available photodiodes in this wavelength range as well as excellent transmission properties of the integrated FPI filter structure, while the monolithical fabrication process offers increased spectrometer robustness and mass production capability.
    Original languageEnglish
    Pages (from-to)130-135
    Number of pages5
    JournalSensors and Actuators A: Physical
    Volume182
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Fabry-Perot interferometers
    Photodiodes
    microelectromechanical systems
    MEMS
    photodiodes
    chips
    Fabrication
    Wavelength
    fabrication
    Microfabrication
    Bragg reflectors
    Aluminum
    spectral sensitivity
    wavelengths
    Spectrometers
    alternating current
    Mirrors
    Tuning
    tuning
    spectrometers

    Keywords

    • Fabry-Perot interferometer
    • MEMS
    • microspectrometer-on-chip

    Cite this

    Rissanen, Anna ; Kantojärvi, Uula ; Blomberg, Martti ; Antila, Jarkko ; Eränen, Simo. / Monolithically integrated microspectrometer-on-chip based on tunable visible light MEMS FPI. In: Sensors and Actuators A: Physical. 2012 ; Vol. 182. pp. 130-135.
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    abstract = "We present a novel microspectrometer-on-chip for the visible spectral region, consisting of a tunable MEMS Fabry-Perot interferometer (FPI) monolithically integrated on a PIN photodiode using IC compatible microfabrication techniques. MEMS FPI is an electrostatically (AC voltage) actuated structure consisting of two parallel atomic layer deposited Bragg mirror stacks of Al2O3/TiO2 with imbedded circular aluminum electrodes on top and the bottom for capacitive tuning capability for the wavelength range of 420–550 nm. The fabrication process flow for the successful completion of the device is presented. The spectral response of the device ranges from 0.1 A/W at λ = 420 nm to 0.2 A/W at λ = 550 nm, with transmission peak width of 8 nm at 540 nm. These results indicate photodiode performance that matches the sensitivity levels typical for commercially available photodiodes in this wavelength range as well as excellent transmission properties of the integrated FPI filter structure, while the monolithical fabrication process offers increased spectrometer robustness and mass production capability.",
    keywords = "Fabry-Perot interferometer, MEMS, microspectrometer-on-chip",
    author = "Anna Rissanen and Uula Kantoj{\"a}rvi and Martti Blomberg and Jarkko Antila and Simo Er{\"a}nen",
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    Monolithically integrated microspectrometer-on-chip based on tunable visible light MEMS FPI. / Rissanen, Anna (Corresponding Author); Kantojärvi, Uula; Blomberg, Martti; Antila, Jarkko; Eränen, Simo.

    In: Sensors and Actuators A: Physical, Vol. 182, 2012, p. 130-135.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Monolithically integrated microspectrometer-on-chip based on tunable visible light MEMS FPI

    AU - Rissanen, Anna

    AU - Kantojärvi, Uula

    AU - Blomberg, Martti

    AU - Antila, Jarkko

    AU - Eränen, Simo

    PY - 2012

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    N2 - We present a novel microspectrometer-on-chip for the visible spectral region, consisting of a tunable MEMS Fabry-Perot interferometer (FPI) monolithically integrated on a PIN photodiode using IC compatible microfabrication techniques. MEMS FPI is an electrostatically (AC voltage) actuated structure consisting of two parallel atomic layer deposited Bragg mirror stacks of Al2O3/TiO2 with imbedded circular aluminum electrodes on top and the bottom for capacitive tuning capability for the wavelength range of 420–550 nm. The fabrication process flow for the successful completion of the device is presented. The spectral response of the device ranges from 0.1 A/W at λ = 420 nm to 0.2 A/W at λ = 550 nm, with transmission peak width of 8 nm at 540 nm. These results indicate photodiode performance that matches the sensitivity levels typical for commercially available photodiodes in this wavelength range as well as excellent transmission properties of the integrated FPI filter structure, while the monolithical fabrication process offers increased spectrometer robustness and mass production capability.

    AB - We present a novel microspectrometer-on-chip for the visible spectral region, consisting of a tunable MEMS Fabry-Perot interferometer (FPI) monolithically integrated on a PIN photodiode using IC compatible microfabrication techniques. MEMS FPI is an electrostatically (AC voltage) actuated structure consisting of two parallel atomic layer deposited Bragg mirror stacks of Al2O3/TiO2 with imbedded circular aluminum electrodes on top and the bottom for capacitive tuning capability for the wavelength range of 420–550 nm. The fabrication process flow for the successful completion of the device is presented. The spectral response of the device ranges from 0.1 A/W at λ = 420 nm to 0.2 A/W at λ = 550 nm, with transmission peak width of 8 nm at 540 nm. These results indicate photodiode performance that matches the sensitivity levels typical for commercially available photodiodes in this wavelength range as well as excellent transmission properties of the integrated FPI filter structure, while the monolithical fabrication process offers increased spectrometer robustness and mass production capability.

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