Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

C. Sampedro, F. Gamiz (Corresponding Author), A. Godoy, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.
Original languageEnglish
Article number202115
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

velocity modulation
transistors
insulators
silicon
simulation
field effect transistors
simulators
modulation
room temperature

Keywords

  • silicon-on-insulator
  • SOI
  • Monte Carlo method
  • Monte Carlo
  • semiconductor device models
  • field effect transistor switches
  • field effect transistor

Cite this

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title = "Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors",
abstract = "We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.",
keywords = "silicon-on-insulator, SOI, Monte Carlo method, Monte Carlo, semiconductor device models, field effect transistor switches, field effect transistor",
author = "C. Sampedro and F. Gamiz and A. Godoy and Mika Prunnila and Jouni Ahopelto",
year = "2005",
doi = "10.1063/1.1929085",
language = "English",
volume = "86",
journal = "Applied Physics Letters",
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Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors. / Sampedro, C.; Gamiz, F. (Corresponding Author); Godoy, A.; Prunnila, Mika; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 86, No. 20, 202115, 2005.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

AU - Sampedro, C.

AU - Gamiz, F.

AU - Godoy, A.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2005

Y1 - 2005

N2 - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

AB - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

KW - silicon-on-insulator

KW - SOI

KW - Monte Carlo method

KW - Monte Carlo

KW - semiconductor device models

KW - field effect transistor switches

KW - field effect transistor

U2 - 10.1063/1.1929085

DO - 10.1063/1.1929085

M3 - Article

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202115

ER -