We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.
- Monte Carlo method
- Monte Carlo
- semiconductor device models
- field effect transistor switches
- field effect transistor
Sampedro, C., Gamiz, F., Godoy, A., Prunnila, M., & Ahopelto, J. (2005). Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors. Applied Physics Letters, 86(20), . https://doi.org/10.1063/1.1929085