Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

C. Sampedro, F. Gamiz (Corresponding Author), A. Godoy, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.
    Original languageEnglish
    Article number202115
    Number of pages3
    JournalApplied Physics Letters
    Volume86
    Issue number20
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    velocity modulation
    transistors
    insulators
    silicon
    simulation
    field effect transistors
    simulators
    modulation
    room temperature

    Keywords

    • silicon-on-insulator
    • SOI
    • Monte Carlo method
    • Monte Carlo
    • semiconductor device models
    • field effect transistor switches
    • field effect transistor

    Cite this

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    title = "Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors",
    abstract = "We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.",
    keywords = "silicon-on-insulator, SOI, Monte Carlo method, Monte Carlo, semiconductor device models, field effect transistor switches, field effect transistor",
    author = "C. Sampedro and F. Gamiz and A. Godoy and Mika Prunnila and Jouni Ahopelto",
    year = "2005",
    doi = "10.1063/1.1929085",
    language = "English",
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    journal = "Applied Physics Letters",
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    }

    Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors. / Sampedro, C.; Gamiz, F. (Corresponding Author); Godoy, A.; Prunnila, Mika; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 86, No. 20, 202115, 2005.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

    AU - Sampedro, C.

    AU - Gamiz, F.

    AU - Godoy, A.

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    PY - 2005

    Y1 - 2005

    N2 - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

    AB - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

    KW - silicon-on-insulator

    KW - SOI

    KW - Monte Carlo method

    KW - Monte Carlo

    KW - semiconductor device models

    KW - field effect transistor switches

    KW - field effect transistor

    U2 - 10.1063/1.1929085

    DO - 10.1063/1.1929085

    M3 - Article

    VL - 86

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 20

    M1 - 202115

    ER -