Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

C. Sampedro, F. Gamiz (Corresponding Author), A. Godoy, Mika Prunnila, Jouni Ahopelto

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    We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.
    Original languageEnglish
    Article number202115
    Number of pages3
    JournalApplied Physics Letters
    Issue number20
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed



    • silicon-on-insulator
    • SOI
    • Monte Carlo method
    • Monte Carlo
    • semiconductor device models
    • field effect transistor switches
    • field effect transistor

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