Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

C. Sampedro; F. Gamiz; A. Godoy; Mika Prunnila; Jouni Ahopelto

doi:10.1063/1.1929085

Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

C. Sampedro
, F. Gamiz^*
, A. Godoy
, Mika Prunnila
, Jouni Ahopelto

^*Corresponding author for this work

University of Granada

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Abstract

We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

Original language	English
Article number	202115
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1929085
Publication status	Published - 2005
MoE publication type	A1 Journal article-refereed

Keywords

silicon-on-insulator
SOI
Monte Carlo method
Monte Carlo
semiconductor device models
field effect transistor switches
field effect transistor

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10.1063/1.1929085

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title = "Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors",

abstract = "We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.",

keywords = "silicon-on-insulator, SOI, Monte Carlo method, Monte Carlo, semiconductor device models, field effect transistor switches, field effect transistor",

author = "C. Sampedro and F. Gamiz and A. Godoy and Mika Prunnila and Jouni Ahopelto",

year = "2005",

doi = "10.1063/1.1929085",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

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T1 - Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

AU - Sampedro, C.

AU - Gamiz, F.

AU - Godoy, A.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2005

Y1 - 2005

N2 - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

AB - We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.

KW - silicon-on-insulator

KW - SOI

KW - Monte Carlo method

KW - Monte Carlo

KW - semiconductor device models

KW - field effect transistor switches

KW - field effect transistor

U2 - 10.1063/1.1929085

DO - 10.1063/1.1929085

M3 - Article

SN - 0003-6951

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202115

ER -

Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

Abstract

Keywords

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