Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Keijo Rakennus, Tuula Hakkarainen, Kirsi Tappura, H. Asonen, Markus Pessa

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
DOIs
Publication statusPublished - 1 May 1992
MoE publication typeA4 Article in a conference publication

Cite this

Rakennus, K., Hakkarainen, T., Tappura, K., Asonen, H., & Pessa, M. (1992). Morphological defects in InP layers grown by gas-source molecular beam epitaxy. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels https://doi.org/10.1109/ICIPRM.1992.235649