Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Keijo Rakennus, Tuula Hakkarainen, Kirsi Tappura, H. Asonen, Markus Pessa

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

3 Citations (Scopus)
Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
DOIs
Publication statusPublished - 1 May 1992
MoE publication typeA4 Article in a conference publication

Cite this

Rakennus, K., Hakkarainen, T., Tappura, K., Asonen, H., & Pessa, M. (1992). Morphological defects in InP layers grown by gas-source molecular beam epitaxy. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels https://doi.org/10.1109/ICIPRM.1992.235649
Rakennus, Keijo ; Hakkarainen, Tuula ; Tappura, Kirsi ; Asonen, H. ; Pessa, Markus. / Morphological defects in InP layers grown by gas-source molecular beam epitaxy. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 1992.
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Rakennus, K, Hakkarainen, T, Tappura, K, Asonen, H & Pessa, M 1992, Morphological defects in InP layers grown by gas-source molecular beam epitaxy. in LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. https://doi.org/10.1109/ICIPRM.1992.235649

Morphological defects in InP layers grown by gas-source molecular beam epitaxy. / Rakennus, Keijo; Hakkarainen, Tuula; Tappura, Kirsi; Asonen, H.; Pessa, Markus.

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 1992.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Morphological defects in InP layers grown by gas-source molecular beam epitaxy

AU - Rakennus, Keijo

AU - Hakkarainen, Tuula

AU - Tappura, Kirsi

AU - Asonen, H.

AU - Pessa, Markus

PY - 1992/5/1

Y1 - 1992/5/1

UR - https://doi.org/10.1109/iciprm.1992.235649

U2 - 10.1109/ICIPRM.1992.235649

DO - 10.1109/ICIPRM.1992.235649

M3 - Conference article in proceedings

SN - 0-7803-0522-1

BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels

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Rakennus K, Hakkarainen T, Tappura K, Asonen H, Pessa M. Morphological defects in InP layers grown by gas-source molecular beam epitaxy. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 1992 https://doi.org/10.1109/ICIPRM.1992.235649