Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Keijo Rakennus; Tuula Hakkarainen; Kirsi Tappura; H. Asonen; Markus Pessa

doi:10.1109/ICIPRM.1992.235649

Morphological defects in InP layers grown by gas-source molecular beam epitaxy

Keijo Rakennus
, Tuula Hakkarainen
, Kirsi Tappura
, H. Asonen
, Markus Pessa

Not published at VTT

Tampere University of Technology (TUT)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Title of host publication	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
DOIs	https://doi.org/10.1109/ICIPRM.1992.235649
Publication status	Published - 1 May 1992
MoE publication type	A4 Article in a conference publication

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10.1109/ICIPRM.1992.235649

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title = "Morphological defects in InP layers grown by gas-source molecular beam epitaxy",

author = "Keijo Rakennus and Tuula Hakkarainen and Kirsi Tappura and H. Asonen and Markus Pessa",

year = "1992",

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day = "1",

doi = "10.1109/ICIPRM.1992.235649",

language = "English",

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booktitle = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels",

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Morphological defects in InP layers grown by gas-source molecular beam epitaxy. / Rakennus, Keijo; Hakkarainen, Tuula; Tappura, Kirsi et al.
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels. 1992.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Morphological defects in InP layers grown by gas-source molecular beam epitaxy

AU - Rakennus, Keijo

AU - Hakkarainen, Tuula

AU - Tappura, Kirsi

AU - Asonen, H.

AU - Pessa, Markus

PY - 1992/5/1

Y1 - 1992/5/1

UR - https://doi.org/10.1109/iciprm.1992.235649

U2 - 10.1109/ICIPRM.1992.235649

DO - 10.1109/ICIPRM.1992.235649

M3 - Conference article in proceedings

SN - 0-7803-0522-1

BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels

ER -

Morphological defects in InP layers grown by gas-source molecular beam epitaxy

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