MOSFET RF Characterization Using Bulk and SOI CMOS Technologies: Dissertation

    Research output: ThesisDissertationMonograph

    Abstract

    MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.
    Original languageEnglish
    QualificationDoctor Degree
    Awarding Institution
    • Aalto University
    Supervisors/Advisors
    • Åberg, Markku, Supervisor
    Award date18 Jun 2007
    Place of PublicationEspoo
    Publisher
    Print ISBNs978-951-38-7024-9
    Electronic ISBNs978-951-38-7025-6
    Publication statusPublished - 2007
    MoE publication typeG4 Doctoral dissertation (monograph)

    Fingerprint

    Resistors
    Parameter extraction
    MOS devices
    Electric network analyzers
    MOSFET devices
    Equivalent circuits
    Geometry
    Uncertainty

    Keywords

    • RF
    • CMOS
    • modeling
    • MOSFET
    • measurement uncertainty

    Cite this

    Saijets, J. (2007). MOSFET RF Characterization Using Bulk and SOI CMOS Technologies: Dissertation. Espoo: VTT Technical Research Centre of Finland.
    Saijets, Jan. / MOSFET RF Characterization Using Bulk and SOI CMOS Technologies : Dissertation. Espoo : VTT Technical Research Centre of Finland, 2007. 181 p.
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    title = "MOSFET RF Characterization Using Bulk and SOI CMOS Technologies: Dissertation",
    abstract = "MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.",
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    author = "Jan Saijets",
    note = "Project code: 16033",
    year = "2007",
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    isbn = "978-951-38-7024-9",
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    MOSFET RF Characterization Using Bulk and SOI CMOS Technologies : Dissertation. / Saijets, Jan.

    Espoo : VTT Technical Research Centre of Finland, 2007. 181 p.

    Research output: ThesisDissertationMonograph

    TY - THES

    T1 - MOSFET RF Characterization Using Bulk and SOI CMOS Technologies

    T2 - Dissertation

    AU - Saijets, Jan

    N1 - Project code: 16033

    PY - 2007

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    N2 - MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.

    AB - MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.

    KW - RF

    KW - CMOS

    KW - modeling

    KW - MOSFET

    KW - measurement uncertainty

    M3 - Dissertation

    SN - 978-951-38-7024-9

    T3 - VTT Publications

    PB - VTT Technical Research Centre of Finland

    CY - Espoo

    ER -

    Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies: Dissertation. Espoo: VTT Technical Research Centre of Finland, 2007. 181 p.