MOSFET RF Characterization Using Bulk and SOI CMOS Technologies: Dissertation

Keyphrases

• Accuracy Improvement 100%
• CMOS Technology 100%
• Resistors 100%
• SOI CMOS 100%
• MOSFET 100%
• Bulk CMOS 100%
• RF Characterization 100%
• Modeling Approach 50%
• Measurement Uncertainty 50%
• Radio Frequency 50%
• Good Accuracy 50%
• High-frequency Behavior 50%
• Model Extraction 50%
• Series Resistance 50%
• Parameter Extraction 50%
• Device Modeling 50%
• Output Impedance 50%
• Network Analyzer 50%
• MOS Transistor 50%
• Equivalent Circuit 50%
• MOS Devices 50%
• RF Model 50%
• MOS Model 50%
• RF Behavior 50%
• Parasitic Series Resistance 50%
• Bulk Resistivity 50%
• Device Behavior 50%
• High Frequency Devices 50%
• RF Characteristics 50%
• Bulk Resistor 50%
• Optimization Accuracy 50%
• Frequency Modeling 50%
• Radio-frequency Characterization 50%
• Small-signal Parameters 50%
• Extraction Error 50%
• Transistor Layout 50%
• Gating Model 50%
• Impedance Behavior 50%
• Resistance Network 50%
• Device Geometry 50%
• Digital CMOS 50%

INIS

• devices 100%
• mosfet 100%
• accuracy 60%
• extraction 60%
• silicon oxides 60%
• resistors 60%
• modeling 40%
• radiowave radiation 40%
• increasing 40%
• modifications 20%
• output 20%
• geometry 20%
• optimization 20%
• errors 20%
• signals 20%
• guidelines 20%
• impedance 20%
• ghz range 20%
• frequency range 20%
• equivalent circuits 20%
• mos transistors 20%

Engineering

• Series Resistance 100%
• Accuracy Improvement 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Radio Frequency 100%
• Measurement Uncertainty 50%
• Good Accuracy 50%
• Equivalent Circuit Model 50%
• Output Impedance 50%
• Device Behavior 50%
• Network Analyzer 50%