MOSFET RF extraction uncertainties due to S parameter measurement errors

Jan Saijets, Markku Åberg

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.
    Original languageEnglish
    Pages (from-to)244 - 247
    Number of pages4
    JournalPhysica Scripta
    VolumeT114
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed
    Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
    Duration: 25 Aug 200327 Aug 2003

    Fingerprint

    MOSFET
    Measurement Error
    field effect transistors
    Capacitance
    Uncertainty
    output
    Output
    analyzers
    capacitance
    Equivalent Circuit
    transconductance
    Inaccurate
    equivalent circuits
    Low Frequency
    specifications
    Specification
    low frequencies
    Range of data
    Resistance

    Cite this

    @article{326cf7e308544d0e8235fb13b0d641e9,
    title = "MOSFET RF extraction uncertainties due to S parameter measurement errors",
    abstract = "The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4{\%} error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50{\%} erroneous. Output resistance can be extracted with less than 20{\%} error for a output real part range of 3Ω to 1kΩ.",
    author = "Jan Saijets and Markku {\AA}berg",
    note = "Project code: T3SU00072",
    year = "2004",
    doi = "10.1088/0031-8949/2004/T114/062",
    language = "English",
    volume = "T114",
    pages = "244 -- 247",
    journal = "Physica Scripta",
    issn = "0031-8949",
    publisher = "Institute of Physics IOP",

    }

    MOSFET RF extraction uncertainties due to S parameter measurement errors. / Saijets, Jan; Åberg, Markku.

    In: Physica Scripta, Vol. T114, 2004, p. 244 - 247.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - MOSFET RF extraction uncertainties due to S parameter measurement errors

    AU - Saijets, Jan

    AU - Åberg, Markku

    N1 - Project code: T3SU00072

    PY - 2004

    Y1 - 2004

    N2 - The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.

    AB - The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.

    U2 - 10.1088/0031-8949/2004/T114/062

    DO - 10.1088/0031-8949/2004/T114/062

    M3 - Article

    VL - T114

    SP - 244

    EP - 247

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    ER -