MOSFET RF extraction uncertainties due to S parameter measurement errors

Jan Saijets; Markku Åberg

doi:10.1088/0031-8949/2004/T114/062

MOSFET RF extraction uncertainties due to S parameter measurement errors

Jan Saijets, Markku Åberg

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.

Original language	English
Pages (from-to)	244 - 247
Number of pages	4
Journal	Physica Scripta
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/062
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed
Event	20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland Duration: 25 Aug 2003 → 27 Aug 2003

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10.1088/0031-8949/2004/T114/062

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title = "MOSFET RF extraction uncertainties due to S parameter measurement errors",

abstract = "The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.",

author = "Jan Saijets and Markku {\AA}berg",

note = "Project code: T3SU00072; 20th Nordic Semiconductor Meeting, NSM20 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2004",

doi = "10.1088/0031-8949/2004/T114/062",

language = "English",

volume = "T114",

pages = "244 -- 247",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "Institute of Physics IOP",

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TY - JOUR

T1 - MOSFET RF extraction uncertainties due to S parameter measurement errors

AU - Saijets, Jan

AU - Åberg, Markku

N1 - Project code: T3SU00072

PY - 2004

Y1 - 2004

N2 - The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.

AB - The effect of S parameter measurement errors resulting from vector network analyzer uncertainties on RF MOSFET parameter extraction are analyzed. The uncertainty effects on the MOSFET small signal equivalent circuit are studied. The lower uncertainty specifications of a high end network analyzer were used as the basis for the analysis. The results suggest that the input resistance extraction is very inaccurate. Transconductance and feedback capacitance characterization can be extracted with less than 4% error at low frequencies below 2–3GHz. Output capacitance is challenging because it can easily be 50% erroneous. Output resistance can be extracted with less than 20% error for a output real part range of 3Ω to 1kΩ.

U2 - 10.1088/0031-8949/2004/T114/062

DO - 10.1088/0031-8949/2004/T114/062

M3 - Article

SN - 0031-8949

VL - T114

SP - 244

EP - 247

JO - Physica Scripta

JF - Physica Scripta

T2 - 20th Nordic Semiconductor Meeting, NSM20

Y2 - 25 August 2003 through 27 August 2003

ER -

MOSFET RF extraction uncertainties due to S parameter measurement errors

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