MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen; H. Okumura; I. Kim; M. Rudzinski; J. Grzonka; T. Palacios; Sami Suihkonen

doi:10.1016/j.jcrysgro.2018.02.020

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen
, H. Okumura^*
, I. Kim
, M. Rudzinski
, J. Grzonka
, T. Palacios
, Sami Suihkonen

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

40 Citations (Scopus)

Abstract

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

Original language	English
Pages (from-to)	50-56
Journal	Journal of Crystal Growth
Volume	487
DOIs	https://doi.org/10.1016/j.jcrysgro.2018.02.020
Publication status	Published - 1 Apr 2018
MoE publication type	A1 Journal article-refereed

Funding

This work was supported by the Academy of Finland (grant 297916), the Foundation for Aalto University Science and Technology, JSPS KAKENHI Grant No. 15H06070 and 16H06424 and National Centre for Research and Development in the frame of projects PBS3/A3/23/2015. A part of the research was performed at the OtaNano - Micronova Nanofabrication Centre of Aalto University.

Keywords

A1. Polarity
A1. X-ray diffraction
A3. Metal-organic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting aluminum compounds

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10.1016/j.jcrysgro.2018.02.020

http://www.scopus.com/inward/record.url?scp=85042313183&partnerID=8YFLogxK

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title = "MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC",

abstract = "We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.",

keywords = "A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds",

author = "J. Lemettinen and H. Okumura and I. Kim and M. Rudzinski and J. Grzonka and T. Palacios and Sami Suihkonen",

year = "2018",

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doi = "10.1016/j.jcrysgro.2018.02.020",

language = "English",

volume = "487",

pages = "50--56",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

AU - Lemettinen, J.

AU - Okumura, H.

AU - Kim, I.

AU - Rudzinski, M.

AU - Grzonka, J.

AU - Palacios, T.

AU - Suihkonen, Sami

PY - 2018/4/1

Y1 - 2018/4/1

N2 - We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

AB - We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

KW - A1. Polarity

KW - A1. X-ray diffraction

KW - A3. Metal-organic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting aluminum compounds

UR - https://www.scopus.com/pages/publications/85042313183

U2 - 10.1016/j.jcrysgro.2018.02.020

DO - 10.1016/j.jcrysgro.2018.02.020

M3 - Article

SN - 0022-0248

VL - 487

SP - 50

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Abstract

Funding

Keywords

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