Multiband integrated synthetic aperture radar (SAR) receiver

F. Abu Bakar, Jan Holmberg, T. Nieminen, Q. Nehal, P. Ukkonen, V. Saari, K. Halonen, Markku Åberg, I. Sundberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages713-716
    ISBN (Electronic)978-1-4673-1259-2
    ISBN (Print)978-1-4673-1261-5
    DOIs
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    Event19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 - Seville, Spain
    Duration: 9 Dec 201212 Dec 2012

    Conference

    Conference19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
    Abbreviated titleICECS 2012
    CountrySpain
    CitySeville
    Period9/12/1212/12/12

    Fingerprint

    Radar receivers
    Digital to analog conversion
    Synthetic aperture radar
    Switches
    Noise figure
    Integrated circuits
    Bandwidth
    Networks (circuits)
    Electric potential
    Temperature

    Cite this

    Abu Bakar, F., Holmberg, J., Nieminen, T., Nehal, Q., Ukkonen, P., Saari, V., ... Sundberg, I. (2012). Multiband integrated synthetic aperture radar (SAR) receiver. In Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 713-716). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ICECS.2012.6463626
    Abu Bakar, F. ; Holmberg, Jan ; Nieminen, T. ; Nehal, Q. ; Ukkonen, P. ; Saari, V. ; Halonen, K. ; Åberg, Markku ; Sundberg, I. / Multiband integrated synthetic aperture radar (SAR) receiver. Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. pp. 713-716
    @inproceedings{fb28af3dbbac4254ab5844d600e39706,
    title = "Multiband integrated synthetic aperture radar (SAR) receiver",
    abstract = "An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.",
    author = "{Abu Bakar}, F. and Jan Holmberg and T. Nieminen and Q. Nehal and P. Ukkonen and V. Saari and K. Halonen and Markku {\AA}berg and I. Sundberg",
    year = "2012",
    doi = "10.1109/ICECS.2012.6463626",
    language = "English",
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    Abu Bakar, F, Holmberg, J, Nieminen, T, Nehal, Q, Ukkonen, P, Saari, V, Halonen, K, Åberg, M & Sundberg, I 2012, Multiband integrated synthetic aperture radar (SAR) receiver. in Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , pp. 713-716, 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, Seville, Spain, 9/12/12. https://doi.org/10.1109/ICECS.2012.6463626

    Multiband integrated synthetic aperture radar (SAR) receiver. / Abu Bakar, F.; Holmberg, Jan; Nieminen, T.; Nehal, Q.; Ukkonen, P.; Saari, V.; Halonen, K.; Åberg, Markku; Sundberg, I.

    Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. p. 713-716.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Nieminen, T.

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    AU - Ukkonen, P.

    AU - Saari, V.

    AU - Halonen, K.

    AU - Åberg, Markku

    AU - Sundberg, I.

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    N2 - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

    AB - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

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    Abu Bakar F, Holmberg J, Nieminen T, Nehal Q, Ukkonen P, Saari V et al. Multiband integrated synthetic aperture radar (SAR) receiver. In Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. p. 713-716 https://doi.org/10.1109/ICECS.2012.6463626