Multiband integrated synthetic aperture radar (SAR) receiver

F. Abu Bakar, Jan Holmberg, T. Nieminen, Q. Nehal, P. Ukkonen, V. Saari, K. Halonen, Markku Åberg, I. Sundberg

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages713-716
ISBN (Electronic)978-1-4673-1259-2
ISBN (Print)978-1-4673-1261-5
DOIs
Publication statusPublished - 2012
MoE publication typeNot Eligible
Event19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 - Seville, Spain
Duration: 9 Dec 201212 Dec 2012

Conference

Conference19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Abbreviated titleICECS 2012
CountrySpain
CitySeville
Period9/12/1212/12/12

Fingerprint

Radar receivers
Digital to analog conversion
Synthetic aperture radar
Switches
Noise figure
Integrated circuits
Bandwidth
Networks (circuits)
Electric potential
Temperature

Cite this

Abu Bakar, F., Holmberg, J., Nieminen, T., Nehal, Q., Ukkonen, P., Saari, V., ... Sundberg, I. (2012). Multiband integrated synthetic aperture radar (SAR) receiver. In Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 713-716). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ICECS.2012.6463626
Abu Bakar, F. ; Holmberg, Jan ; Nieminen, T. ; Nehal, Q. ; Ukkonen, P. ; Saari, V. ; Halonen, K. ; Åberg, Markku ; Sundberg, I. / Multiband integrated synthetic aperture radar (SAR) receiver. Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. pp. 713-716
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abstract = "An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.",
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Abu Bakar, F, Holmberg, J, Nieminen, T, Nehal, Q, Ukkonen, P, Saari, V, Halonen, K, Åberg, M & Sundberg, I 2012, Multiband integrated synthetic aperture radar (SAR) receiver. in Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , pp. 713-716, 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, Seville, Spain, 9/12/12. https://doi.org/10.1109/ICECS.2012.6463626

Multiband integrated synthetic aperture radar (SAR) receiver. / Abu Bakar, F.; Holmberg, Jan; Nieminen, T.; Nehal, Q.; Ukkonen, P.; Saari, V.; Halonen, K.; Åberg, Markku; Sundberg, I.

Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers , 2012. p. 713-716.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Multiband integrated synthetic aperture radar (SAR) receiver

AU - Abu Bakar, F.

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AU - Saari, V.

AU - Halonen, K.

AU - Åberg, Markku

AU - Sundberg, I.

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N2 - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

AB - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

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M3 - Conference article in proceedings

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BT - Proceedings

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Abu Bakar F, Holmberg J, Nieminen T, Nehal Q, Ukkonen P, Saari V et al. Multiband integrated synthetic aperture radar (SAR) receiver. In Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers . 2012. p. 713-716 https://doi.org/10.1109/ICECS.2012.6463626