Multiband integrated synthetic aperture radar (SAR) receiver

F. Abu Bakar; Jan Holmberg; T. Nieminen; Q. Nehal; P. Ukkonen; V. Saari; K. Halonen; Markku Åberg; I. Sundberg

doi:10.1109/ICECS.2012.6463626

Multiband integrated synthetic aperture radar (SAR) receiver

F. Abu Bakar
, Jan Holmberg
, T. Nieminen
, Q. Nehal
, P. Ukkonen
, V. Saari
, K. Halonen
, Markku Åberg
, I. Sundberg

Aalto University
DA-Group

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	713-716
ISBN (Electronic)	978-1-4673-1259-2
ISBN (Print)	978-1-4673-1261-5
DOIs	https://doi.org/10.1109/ICECS.2012.6463626
Publication status	Published - 2012
MoE publication type	Not Eligible
Event	19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 - Seville, Spain Duration: 9 Dec 2012 → 12 Dec 2012

Conference

Conference	19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Abbreviated title	ICECS 2012
Country/Territory	Spain
City	Seville
Period	9/12/12 → 12/12/12

Access to Document

10.1109/ICECS.2012.6463626

Cite this

Abu Bakar, F., Holmberg, J., Nieminen, T., Nehal, Q., Ukkonen, P., Saari, V., Halonen, K., Åberg, M., & Sundberg, I. (2012). Multiband integrated synthetic aperture radar (SAR) receiver. In Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 713-716). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ICECS.2012.6463626

@inproceedings{fb28af3dbbac4254ab5844d600e39706,

title = "Multiband integrated synthetic aperture radar (SAR) receiver",

abstract = "An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.",

author = "\{Abu Bakar\}, F. and Jan Holmberg and T. Nieminen and Q. Nehal and P. Ukkonen and V. Saari and K. Halonen and Markku {\AA}berg and I. Sundberg",

year = "2012",

doi = "10.1109/ICECS.2012.6463626",

language = "English",

isbn = "978-1-4673-1261-5",

pages = "713--716",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, ICECS 2012 ; Conference date: 09-12-2012 Through 12-12-2012",

}

Abu Bakar, F, Holmberg, J, Nieminen, T, Nehal, Q, Ukkonen, P, Saari, V, Halonen, K, Åberg, M & Sundberg, I 2012, Multiband integrated synthetic aperture radar (SAR) receiver. in Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers, pp. 713-716, 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, Seville, Spain, 9/12/12. https://doi.org/10.1109/ICECS.2012.6463626

Multiband integrated synthetic aperture radar (SAR) receiver. / Abu Bakar, F.; Holmberg, Jan; Nieminen, T. et al.
Proceedings: 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. IEEE Institute of Electrical and Electronic Engineers, 2012. p. 713-716.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Multiband integrated synthetic aperture radar (SAR) receiver

AU - Abu Bakar, F.

AU - Holmberg, Jan

AU - Nieminen, T.

AU - Nehal, Q.

AU - Ukkonen, P.

AU - Saari, V.

AU - Halonen, K.

AU - Åberg, Markku

AU - Sundberg, I.

PY - 2012

Y1 - 2012

N2 - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

AB - An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC.

U2 - 10.1109/ICECS.2012.6463626

DO - 10.1109/ICECS.2012.6463626

M3 - Conference article in proceedings

SN - 978-1-4673-1261-5

SP - 713

EP - 716

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

Y2 - 9 December 2012 through 12 December 2012

ER -

Multiband integrated synthetic aperture radar (SAR) receiver

Abstract

Conference

Access to Document

Fingerprint

Cite this