N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

Jori Lemettinen; Hironori Okumura; Tomas Palacios; Sami Suihkonen

doi:10.7567/APEX.11.101002

N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

Jori Lemettinen^*
, Hironori Okumura
, Tomas Palacios
, Sami Suihkonen

^*Corresponding author for this work

Not published at VTT

University of Tsukuba
MIT Massachusetts Institute of Technology
Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics

Original language	English
Article number	101002
Journal	Applied Physics Express
Volume	11
Issue number	10
DOIs	https://doi.org/10.7567/APEX.11.101002
Publication status	Published - Oct 2018
MoE publication type	A1 Journal article-refereed

Funding

Acknowledgments We acknowledge the funding support from the Academy of Finland (Grant No. 297916) and JSPS KAKENHI (Grant Nos. 16H06424 and 17K14110). A part of this research was performed at the OtaNano–Micronova Nanofabrication Centre of Aalto University. This work was carried out in part through the use of MIT Microsystems Technology Laboratories.

Keywords

ELECTRON-MOBILITY TRANSISTORS
MOVPE GROWTH
GAN
FACE
DEPOSITION
CARBON

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10.7567/APEX.11.101002

Cite this

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title = "N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications",

abstract = "We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics",

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AB - We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics

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KW - FACE

KW - DEPOSITION

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N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

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N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

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