INIS
applications
100%
buffers
100%
transistors
100%
growth
100%
organometallic compounds
100%
aluminium nitrides
100%
vapor phase epitaxy
100%
layers
33%
silicon
33%
concentration
33%
metals
33%
semiconductor materials
33%
field effect transistors
33%
leakage current
33%
high temperature
16%
leakage
16%
Keyphrases
Transistor
100%
Metal Organic Vapor Phase Epitaxy (MOVPE)
100%
Nitrogen-polar (N-polar)
100%
AlN Buffer Layer
100%
MESFET
40%
Buffer Leakage
40%
High Concentration
20%
Growth Temperature
20%
Electrical Characterization
20%
Off-state
20%
Low Leakage
20%
High-temperature Growth
20%
AlN Layer
20%
Silicon Concentration
20%
Drain Current
20%
Cm(III)
20%
Material Science
Transistor
100%
Aluminum Nitride
100%
Vapor Phase Epitaxy
100%
Field Effect Transistors
33%
Silicon
33%
Buffer Layer
16%
Engineering
Field-Effect Transistor
100%
Current Drain
50%
Growth Temperature
50%
Buffer Layer
50%
Earth and Planetary Sciences