Abstract
We demonstrate high aspect ratio silicon nanorod arrays
by cyclic deep reactive ion etching (DRIE) process as a
scaffold to enhance the energy density of a Si-based
supercapacitor. By unique atomic layer deposition (ALD)
technology, a conformal nanolayer of TiN was deposited on
the silicon nanorod arrays as the active material. The
TiN coated silicon nanorods as a supercapacitor electrode
lead to a 6 times improvement in capacitance compared to
flat TiN film electrode.
Original language | English |
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Pages (from-to) | 51-55 |
Journal | Electrochemistry Communications |
Volume | 70 |
DOIs | |
Publication status | Published - 2016 |
MoE publication type | A1 Journal article-refereed |
Keywords
- aspect ratio
- atomic layer deposition
- electrodes
- reactive ion etching
- scaffolds
- silicon
- titanium compounds
- titanium nitride
- deep reactive Ion etching
- DRIE
- nano films
- nano-rod arrays
- super capacitor
- supercapacitor electrodes
- tin film electrodes
- titanium nitride coating