Nanoimprint-induced effects on electrical and optical properties of quantum well structures

S. Zankovych; I Maximov; I. Shorubalko; J. Seekamp; M. Beck; S. Romanov; D. Reuter; P. Schafmeister; A.D. Wieck; Jouni Ahopelto; C.M. Sotomayor Torres; L. Montelius

doi:10.1016/S0167-9317(03)00074-1

Nanoimprint-induced effects on electrical and optical properties of quantum well structures

S. Zankovych (Corresponding Author), I Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, Jouni Ahopelto, C.M. Sotomayor Torres, L. Montelius

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga_0.47In_0.53As–InP and GaAs–Al_0.3Ga_0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga_0.25In_0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.

Original language	English
Pages (from-to)	214-220
Number of pages	7
Journal	Microelectronic Engineering
Volume	67-68
DOIs	https://doi.org/10.1016/S0167-9317(03)00074-1
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed
Event	28th International Conference on Micro- and Nano-Engineering - Lugano, Switzerland Duration: 16 Sep 2002 → 19 Sep 2002

Keywords

nanoimprint lithography
quantum wells
quantum transport
optoelectronic devices
optoelectronics

Access to Document

10.1016/S0167-9317(03)00074-1

Fingerprint Dive into the research topics of 'Nanoimprint-induced effects on electrical and optical properties of quantum well structures'. Together they form a unique fingerprint.

Cite this

Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S., Reuter, D., Schafmeister, P., Wieck, A. D., Ahopelto, J., Sotomayor Torres, C. M., & Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. Microelectronic Engineering, 67-68, 214-220. https://doi.org/10.1016/S0167-9317(03)00074-1

@article{79251a34efe2416fb33acd42287e7502,

title = "Nanoimprint-induced effects on electrical and optical properties of quantum well structures",

abstract = "A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.",

keywords = "nanoimprint lithography, quantum wells, quantum transport, optoelectronic devices, optoelectronics",

author = "S. Zankovych and I Maximov and I. Shorubalko and J. Seekamp and M. Beck and S. Romanov and D. Reuter and P. Schafmeister and A.D. Wieck and Jouni Ahopelto and {Sotomayor Torres}, C.M. and L. Montelius",

year = "2003",

doi = "10.1016/S0167-9317(03)00074-1",

language = "English",

volume = "67-68",

pages = "214--220",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

note = "28th International Conference on Micro- and Nano-Engineering, MNE 2002 ; Conference date: 16-09-2002 Through 19-09-2002",

}

Nanoimprint-induced effects on electrical and optical properties of quantum well structures. / Zankovych, S. (Corresponding Author); Maximov, I; Shorubalko, I.; Seekamp, J.; Beck, M.; Romanov, S.; Reuter, D.; Schafmeister, P.; Wieck, A.D.; Ahopelto, Jouni; Sotomayor Torres, C.M.; Montelius, L.

In: Microelectronic Engineering, Vol. 67-68, 2003, p. 214-220.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Nanoimprint-induced effects on electrical and optical properties of quantum well structures

AU - Zankovych, S.

AU - Maximov, I

AU - Shorubalko, I.

AU - Seekamp, J.

AU - Beck, M.

AU - Romanov, S.

AU - Reuter, D.

AU - Schafmeister, P.

AU - Wieck, A.D.

AU - Ahopelto, Jouni

AU - Sotomayor Torres, C.M.

AU - Montelius, L.

PY - 2003

Y1 - 2003

N2 - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.

AB - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.

KW - nanoimprint lithography

KW - quantum wells

KW - quantum transport

KW - optoelectronic devices

KW - optoelectronics

U2 - 10.1016/S0167-9317(03)00074-1

DO - 10.1016/S0167-9317(03)00074-1

M3 - Article

VL - 67-68

SP - 214

EP - 220

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

T2 - 28th International Conference on Micro- and Nano-Engineering

Y2 - 16 September 2002 through 19 September 2002

ER -