Nanoimprint-induced effects on electrical and optical properties of quantum well structures

S. Zankovych (Corresponding Author), I Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, Jouni Ahopelto, C.M. Sotomayor Torres, L. Montelius

Research output: Contribution to journalArticleScientificpeer-review

7 Citations (Scopus)

Abstract

A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.
Original languageEnglish
Pages (from-to)214-220
Number of pages7
JournalMicroelectronic Engineering
Volume67-68
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed
Event28th International Conference on Micro- and Nano-Engineering - Lugano, Switzerland
Duration: 16 Sep 200219 Sep 2002

Fingerprint

Semiconductor quantum wells
Nanoimprint lithography
Electric properties
lithography
Optical properties
electrical properties
quantum wells
optical properties
printing
Luminescence
Printing
Photoluminescence
luminescence
photoluminescence
Two dimensional electron gas
deterioration
Transport properties
Temperature
Lithography
Carrier concentration

Keywords

  • nanoimprint lithography
  • quantum wells
  • quantum transport
  • optoelectronic devices
  • optoelectronics

Cite this

Zankovych, S., Maximov, I., Shorubalko, I., Seekamp, J., Beck, M., Romanov, S., ... Montelius, L. (2003). Nanoimprint-induced effects on electrical and optical properties of quantum well structures. Microelectronic Engineering, 67-68, 214-220. https://doi.org/10.1016/S0167-9317(03)00074-1
Zankovych, S. ; Maximov, I ; Shorubalko, I. ; Seekamp, J. ; Beck, M. ; Romanov, S. ; Reuter, D. ; Schafmeister, P. ; Wieck, A.D. ; Ahopelto, Jouni ; Sotomayor Torres, C.M. ; Montelius, L. / Nanoimprint-induced effects on electrical and optical properties of quantum well structures. In: Microelectronic Engineering. 2003 ; Vol. 67-68. pp. 214-220.
@article{79251a34efe2416fb33acd42287e7502,
title = "Nanoimprint-induced effects on electrical and optical properties of quantum well structures",
abstract = "A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.",
keywords = "nanoimprint lithography, quantum wells, quantum transport, optoelectronic devices, optoelectronics",
author = "S. Zankovych and I Maximov and I. Shorubalko and J. Seekamp and M. Beck and S. Romanov and D. Reuter and P. Schafmeister and A.D. Wieck and Jouni Ahopelto and {Sotomayor Torres}, C.M. and L. Montelius",
year = "2003",
doi = "10.1016/S0167-9317(03)00074-1",
language = "English",
volume = "67-68",
pages = "214--220",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Zankovych, S, Maximov, I, Shorubalko, I, Seekamp, J, Beck, M, Romanov, S, Reuter, D, Schafmeister, P, Wieck, AD, Ahopelto, J, Sotomayor Torres, CM & Montelius, L 2003, 'Nanoimprint-induced effects on electrical and optical properties of quantum well structures', Microelectronic Engineering, vol. 67-68, pp. 214-220. https://doi.org/10.1016/S0167-9317(03)00074-1

Nanoimprint-induced effects on electrical and optical properties of quantum well structures. / Zankovych, S. (Corresponding Author); Maximov, I; Shorubalko, I.; Seekamp, J.; Beck, M.; Romanov, S.; Reuter, D.; Schafmeister, P.; Wieck, A.D.; Ahopelto, Jouni; Sotomayor Torres, C.M.; Montelius, L.

In: Microelectronic Engineering, Vol. 67-68, 2003, p. 214-220.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Nanoimprint-induced effects on electrical and optical properties of quantum well structures

AU - Zankovych, S.

AU - Maximov, I

AU - Shorubalko, I.

AU - Seekamp, J.

AU - Beck, M.

AU - Romanov, S.

AU - Reuter, D.

AU - Schafmeister, P.

AU - Wieck, A.D.

AU - Ahopelto, Jouni

AU - Sotomayor Torres, C.M.

AU - Montelius, L.

PY - 2003

Y1 - 2003

N2 - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.

AB - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.

KW - nanoimprint lithography

KW - quantum wells

KW - quantum transport

KW - optoelectronic devices

KW - optoelectronics

U2 - 10.1016/S0167-9317(03)00074-1

DO - 10.1016/S0167-9317(03)00074-1

M3 - Article

VL - 67-68

SP - 214

EP - 220

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -