Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 214-220 |
| Number of pages | 7 |
| Journal | Microelectronic Engineering |
| Volume | 67-68 |
| DOIs | |
| Publication status | Published - 2003 |
| MoE publication type | A1 Journal article-refereed |
| Event | 28th International Conference on Micro- and Nano-Engineering - Lugano, Switzerland Duration: 16 Sep 2002 → 19 Sep 2002 |
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Keywords
- nanoimprint lithography
- quantum wells
- quantum transport
- optoelectronic devices
- optoelectronics
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Nanoimprint-induced effects on electrical and optical properties of quantum well structures. / Zankovych, S. (Corresponding Author); Maximov, I; Shorubalko, I.; Seekamp, J.; Beck, M.; Romanov, S.; Reuter, D.; Schafmeister, P.; Wieck, A.D.; Ahopelto, Jouni; Sotomayor Torres, C.M.; Montelius, L.
In: Microelectronic Engineering, Vol. 67-68, 2003, p. 214-220.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Nanoimprint-induced effects on electrical and optical properties of quantum well structures
AU - Zankovych, S.
AU - Maximov, I
AU - Shorubalko, I.
AU - Seekamp, J.
AU - Beck, M.
AU - Romanov, S.
AU - Reuter, D.
AU - Schafmeister, P.
AU - Wieck, A.D.
AU - Ahopelto, Jouni
AU - Sotomayor Torres, C.M.
AU - Montelius, L.
PY - 2003
Y1 - 2003
N2 - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.
AB - A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.
KW - nanoimprint lithography
KW - quantum wells
KW - quantum transport
KW - optoelectronic devices
KW - optoelectronics
U2 - 10.1016/S0167-9317(03)00074-1
DO - 10.1016/S0167-9317(03)00074-1
M3 - Article
VL - 67-68
SP - 214
EP - 220
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -