Nanoimprint-induced effects on electrical and optical properties of quantum well structures

S. Zankovych (Corresponding Author), I Maximov, I. Shorubalko, J. Seekamp, M. Beck, S. Romanov, D. Reuter, P. Schafmeister, A.D. Wieck, Jouni Ahopelto, C.M. Sotomayor Torres, L. Montelius

    Research output: Contribution to journalArticleScientificpeer-review

    7 Citations (Scopus)


    A study of optical and transport properties of semiconductor quantum well structures subjected to nanoimprint lithography (NIL), with its pressure and temperature cycles, has been undertaken to ascertain if this lithography technique induces detrimental changes in these properties of the active layers over a range of pressures and temperatures, typically used in this printing process. Ga0.47In0.53As–InP and GaAs–Al0.3Ga0.7As multiple quantum well samples were investigated. Luminescence and the photoluminescence excitation were recorded before and after printing. No impact upon the luminescence energy and intensity were detected. From the photoluminescence spectrum no evidence of induced strain was found. The magneto transport experiments yielded no evidence of deterioration of neither the mobility nor carrier concentration of a two-dimensional electron gas in a modulation-doped Ga0.25In0.75As/InP heterostructure. Results on samples subjected to the NIL process over a wide range of applied pressure and temperature are presented and discussed.
    Original languageEnglish
    Pages (from-to)214-220
    Number of pages7
    JournalMicroelectronic Engineering
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed
    Event28th International Conference on Micro- and Nano-Engineering - Lugano, Switzerland
    Duration: 16 Sept 200219 Sept 2002


    • nanoimprint lithography
    • quantum wells
    • quantum transport
    • optoelectronic devices
    • optoelectronics


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