Nanoimprint lithography for organic electronics

C. Clavijo Cedeño; J. Seekamp; A.P. Kam; T. Hoffmann; S. Zankovych; C.M. Sotomayor Torres; C. Menozzi; M. Cavallini; M. Murgia; G. Ruani; F. Biscarini; M. Behl; R. Zentel; Jouni Ahopelto

doi:10.1016/S0167-9317(02)00505-1

Nanoimprint lithography for organic electronics

C. Clavijo Cedeño (Corresponding Author), J. Seekamp, A.P. Kam, T. Hoffmann, S. Zankovych, C.M. Sotomayor Torres, C. Menozzi, M. Cavallini, M. Murgia, G. Ruani, F. Biscarini, M. Behl, R. Zentel, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

69 Citations (Scopus)

Abstract

Thin films made of organic semiconductors (-sexithiophene, PDAS and PBAS) have been printed and the impact on morphology studied by optical, atomic force and electron microscopy. Surfaces in contact with the stamp during printing undergo a change towards smoother and more ordered material at the macromolecular scale. Interdigitated nanoelectrodes to be used as source and drain in TFTs have been made and printed down to 100 nm. PDAS and PBAS can be printed at room temperature and preserve their printed feature provided they are cross-linked afterwards.

Original language	English
Pages (from-to)	25-31
Journal	Microelectronic Engineering
Volume	61-62
DOIs	https://doi.org/10.1016/S0167-9317(02)00505-1
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

nanoimprint lithography
oligothiophenes
triaraylamines

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10.1016/S0167-9317(02)00505-1

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title = "Nanoimprint lithography for organic electronics",

abstract = "Thin films made of organic semiconductors (-sexithiophene, PDAS and PBAS) have been printed and the impact on morphology studied by optical, atomic force and electron microscopy. Surfaces in contact with the stamp during printing undergo a change towards smoother and more ordered material at the macromolecular scale. Interdigitated nanoelectrodes to be used as source and drain in TFTs have been made and printed down to 100 nm. PDAS and PBAS can be printed at room temperature and preserve their printed feature provided they are cross-linked afterwards.",

keywords = "nanoimprint lithography, oligothiophenes, triaraylamines",

author = "Cede{\~n}o, {C. Clavijo} and J. Seekamp and A.P. Kam and T. Hoffmann and S. Zankovych and {Sotomayor Torres}, C.M. and C. Menozzi and M. Cavallini and M. Murgia and G. Ruani and F. Biscarini and M. Behl and R. Zentel and Jouni Ahopelto",

year = "2002",

doi = "10.1016/S0167-9317(02)00505-1",

language = "English",

volume = "61-62",

pages = "25--31",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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TY - JOUR

T1 - Nanoimprint lithography for organic electronics

AU - Cedeño, C. Clavijo

AU - Seekamp, J.

AU - Kam, A.P.

AU - Hoffmann, T.

AU - Zankovych, S.

AU - Sotomayor Torres, C.M.

AU - Menozzi, C.

AU - Cavallini, M.

AU - Murgia, M.

AU - Ruani, G.

AU - Biscarini, F.

AU - Behl, M.

AU - Zentel, R.

AU - Ahopelto, Jouni

PY - 2002

Y1 - 2002

N2 - Thin films made of organic semiconductors (-sexithiophene, PDAS and PBAS) have been printed and the impact on morphology studied by optical, atomic force and electron microscopy. Surfaces in contact with the stamp during printing undergo a change towards smoother and more ordered material at the macromolecular scale. Interdigitated nanoelectrodes to be used as source and drain in TFTs have been made and printed down to 100 nm. PDAS and PBAS can be printed at room temperature and preserve their printed feature provided they are cross-linked afterwards.

AB - Thin films made of organic semiconductors (-sexithiophene, PDAS and PBAS) have been printed and the impact on morphology studied by optical, atomic force and electron microscopy. Surfaces in contact with the stamp during printing undergo a change towards smoother and more ordered material at the macromolecular scale. Interdigitated nanoelectrodes to be used as source and drain in TFTs have been made and printed down to 100 nm. PDAS and PBAS can be printed at room temperature and preserve their printed feature provided they are cross-linked afterwards.

KW - nanoimprint lithography

KW - oligothiophenes

KW - triaraylamines

U2 - 10.1016/S0167-9317(02)00505-1

DO - 10.1016/S0167-9317(02)00505-1

M3 - Article

SN - 0167-9317

VL - 61-62

SP - 25

EP - 31

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Nanoimprint lithography for organic electronics

Abstract

Keywords

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