Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy

Jouni Ahopelto, A. Yamaguchi, K. Nishi, A. Usui, H. Sakaki

Research output: Contribution to journalArticleScientificpeer-review

89 Citations (Scopus)

Abstract

A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

Original languageEnglish
Pages (from-to)32 - 35
Number of pages4
JournalJapanese Journal of Applied Physics
Volume32
Issue numberPart 2, Number 1A/B
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Vapor phase epitaxy
Photolithography
Hydrides
vapor phase epitaxy
hydrides
boxes
Etching
Photoluminescence
Wavelength
photolithography
etching
photoluminescence
wavelengths

Cite this

Ahopelto, Jouni ; Yamaguchi, A. ; Nishi, K. ; Usui, A. ; Sakaki, H. / Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. Part 2, Number 1A/B. pp. 32 - 35.
@article{3ade336cfca744e093890126b1fed5cb,
title = "Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy",
abstract = "A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.",
author = "Jouni Ahopelto and A. Yamaguchi and K. Nishi and A. Usui and H. Sakaki",
year = "1993",
doi = "10.1143/JJAP.32.L32",
language = "English",
volume = "32",
pages = "32 -- 35",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "Part 2, Number 1A/B",

}

Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy. / Ahopelto, Jouni; Yamaguchi, A.; Nishi, K.; Usui, A.; Sakaki, H.

In: Japanese Journal of Applied Physics, Vol. 32, No. Part 2, Number 1A/B, 1993, p. 32 - 35.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy

AU - Ahopelto, Jouni

AU - Yamaguchi, A.

AU - Nishi, K.

AU - Usui, A.

AU - Sakaki, H.

PY - 1993

Y1 - 1993

N2 - A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

AB - A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

U2 - 10.1143/JJAP.32.L32

DO - 10.1143/JJAP.32.L32

M3 - Article

VL - 32

SP - 32

EP - 35

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - Part 2, Number 1A/B

ER -