Abstract
A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.
| Original language | English |
|---|---|
| Pages (from-to) | 32 - 35 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | Part 2, Number 1A/B |
| DOIs | |
| Publication status | Published - 1993 |
| MoE publication type | A1 Journal article-refereed |