Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy

Jouni Ahopelto, A. Yamaguchi, K. Nishi, A. Usui, H. Sakaki

    Research output: Contribution to journalArticleScientificpeer-review

    89 Citations (Scopus)

    Abstract

    A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

    Original languageEnglish
    Pages (from-to)32 - 35
    Number of pages4
    JournalJapanese Journal of Applied Physics
    Volume32
    Issue numberPart 2, Number 1A/B
    DOIs
    Publication statusPublished - 1993
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Vapor phase epitaxy
    Photolithography
    Hydrides
    vapor phase epitaxy
    hydrides
    boxes
    Etching
    Photoluminescence
    Wavelength
    photolithography
    etching
    photoluminescence
    wavelengths

    Cite this

    Ahopelto, Jouni ; Yamaguchi, A. ; Nishi, K. ; Usui, A. ; Sakaki, H. / Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy. In: Japanese Journal of Applied Physics. 1993 ; Vol. 32, No. Part 2, Number 1A/B. pp. 32 - 35.
    @article{3ade336cfca744e093890126b1fed5cb,
    title = "Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy",
    abstract = "A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.",
    author = "Jouni Ahopelto and A. Yamaguchi and K. Nishi and A. Usui and H. Sakaki",
    year = "1993",
    doi = "10.1143/JJAP.32.L32",
    language = "English",
    volume = "32",
    pages = "32 -- 35",
    journal = "Japanese Journal of Applied Physics",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "Part 2, Number 1A/B",

    }

    Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy. / Ahopelto, Jouni; Yamaguchi, A.; Nishi, K.; Usui, A.; Sakaki, H.

    In: Japanese Journal of Applied Physics, Vol. 32, No. Part 2, Number 1A/B, 1993, p. 32 - 35.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy

    AU - Ahopelto, Jouni

    AU - Yamaguchi, A.

    AU - Nishi, K.

    AU - Usui, A.

    AU - Sakaki, H.

    PY - 1993

    Y1 - 1993

    N2 - A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

    AB - A novel method utilizing the island formation in hydride vapor phase epitaxy (VPE) is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

    U2 - 10.1143/JJAP.32.L32

    DO - 10.1143/JJAP.32.L32

    M3 - Article

    VL - 32

    SP - 32

    EP - 35

    JO - Japanese Journal of Applied Physics

    JF - Japanese Journal of Applied Physics

    SN - 0021-4922

    IS - Part 2, Number 1A/B

    ER -