Near-field measurements of submillimeter-wave reflectarrays

Aleksi Tamminen, Juha Ala-Laurinaho, Sampo Mäkelä, David Gomes Martins, Janne Häkli, Päivi Koivisto, Pekka Rantakari, Jussi Säily, Reijo Tuovinen, Arttu Luukanen, Markku Sipilä, Antti V. Räisänen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

6 Citations (Scopus)

Abstract

We present results of experimental characterization of static 650-GHz reflectarrays. The reflectarrays are based on 123-µm circular microstrip patch antennas with tuning stubs as phase shifters. The static reflectarrays are considered as predecessors for active reflectarrays, and therefore the reflectarray elements have two discrete phase-shift values: 0° and -180°. The reflectarrays have 95000 elements, and they have separation of 400 µm. The reflectarrays are fabricated on 150-mm silicon wafers with a ground plane and a 20-µm polyimide substrate atop. The fabricated static reflectarrays are characterized in a near-field measurement range and their beam patterns at the focusing distance of 20 m are calculated with plane-to-plane transform. At this high frequency, fabrication tolerances are difficult to meet and, e.g., over-etching of the antenna and phase-shifting structure may offset the resonance frequency of the reflectarray element by more than its bandwidth.
Original languageEnglish
Title of host publicationPassive and Active Millimeter-Wave Imaging XVI
EditorsDavid A. Wikner, Arttu R. Luukanen
Place of PublicationBellingham
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-0-8194-9506-8
DOIs
Publication statusPublished - 2013
MoE publication typeA4 Article in a conference publication
EventSPIE Defense, Security, and Sensing 2013 - Baltimore, United States
Duration: 29 Apr 20133 May 2013

Publication series

SeriesProceedings of SPIE
Volume8715
ISSN0277-786X

Conference

ConferenceSPIE Defense, Security, and Sensing 2013
CountryUnited States
CityBaltimore
Period29/04/133/05/13

Fingerprint

submillimeter waves
near fields
patch antennas
microstrip antennas
rangefinding
polyimides
phase shift
antennas
tuning
etching
wafers
bandwidth
fabrication
silicon

Keywords

  • imaging radar
  • near-field measurements
  • reflectarray
  • submillimeter-wave

Cite this

Tamminen, A., Ala-Laurinaho, J., Mäkelä, S., Gomes Martins, D., Häkli, J., Koivisto, P., ... Räisänen, A. V. (2013). Near-field measurements of submillimeter-wave reflectarrays. In D. A. Wikner, & A. R. Luukanen (Eds.), Passive and Active Millimeter-Wave Imaging XVI [871506] Bellingham: International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8715 https://doi.org/10.1117/12.2018606
Tamminen, Aleksi ; Ala-Laurinaho, Juha ; Mäkelä, Sampo ; Gomes Martins, David ; Häkli, Janne ; Koivisto, Päivi ; Rantakari, Pekka ; Säily, Jussi ; Tuovinen, Reijo ; Luukanen, Arttu ; Sipilä, Markku ; Räisänen, Antti V. / Near-field measurements of submillimeter-wave reflectarrays. Passive and Active Millimeter-Wave Imaging XVI. editor / David A. Wikner ; Arttu R. Luukanen. Bellingham : International Society for Optics and Photonics SPIE, 2013. (Proceedings of SPIE, Vol. 8715).
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abstract = "We present results of experimental characterization of static 650-GHz reflectarrays. The reflectarrays are based on 123-µm circular microstrip patch antennas with tuning stubs as phase shifters. The static reflectarrays are considered as predecessors for active reflectarrays, and therefore the reflectarray elements have two discrete phase-shift values: 0° and -180°. The reflectarrays have 95000 elements, and they have separation of 400 µm. The reflectarrays are fabricated on 150-mm silicon wafers with a ground plane and a 20-µm polyimide substrate atop. The fabricated static reflectarrays are characterized in a near-field measurement range and their beam patterns at the focusing distance of 20 m are calculated with plane-to-plane transform. At this high frequency, fabrication tolerances are difficult to meet and, e.g., over-etching of the antenna and phase-shifting structure may offset the resonance frequency of the reflectarray element by more than its bandwidth.",
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Tamminen, A, Ala-Laurinaho, J, Mäkelä, S, Gomes Martins, D, Häkli, J, Koivisto, P, Rantakari, P, Säily, J, Tuovinen, R, Luukanen, A, Sipilä, M & Räisänen, AV 2013, Near-field measurements of submillimeter-wave reflectarrays. in DA Wikner & AR Luukanen (eds), Passive and Active Millimeter-Wave Imaging XVI., 871506, International Society for Optics and Photonics SPIE, Bellingham, Proceedings of SPIE, vol. 8715, SPIE Defense, Security, and Sensing 2013, Baltimore, United States, 29/04/13. https://doi.org/10.1117/12.2018606

Near-field measurements of submillimeter-wave reflectarrays. / Tamminen, Aleksi; Ala-Laurinaho, Juha; Mäkelä, Sampo; Gomes Martins, David; Häkli, Janne; Koivisto, Päivi; Rantakari, Pekka; Säily, Jussi; Tuovinen, Reijo; Luukanen, Arttu; Sipilä, Markku; Räisänen, Antti V.

Passive and Active Millimeter-Wave Imaging XVI. ed. / David A. Wikner; Arttu R. Luukanen. Bellingham : International Society for Optics and Photonics SPIE, 2013. 871506 (Proceedings of SPIE, Vol. 8715).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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T1 - Near-field measurements of submillimeter-wave reflectarrays

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AU - Ala-Laurinaho, Juha

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AU - Häkli, Janne

AU - Koivisto, Päivi

AU - Rantakari, Pekka

AU - Säily, Jussi

AU - Tuovinen, Reijo

AU - Luukanen, Arttu

AU - Sipilä, Markku

AU - Räisänen, Antti V.

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AB - We present results of experimental characterization of static 650-GHz reflectarrays. The reflectarrays are based on 123-µm circular microstrip patch antennas with tuning stubs as phase shifters. The static reflectarrays are considered as predecessors for active reflectarrays, and therefore the reflectarray elements have two discrete phase-shift values: 0° and -180°. The reflectarrays have 95000 elements, and they have separation of 400 µm. The reflectarrays are fabricated on 150-mm silicon wafers with a ground plane and a 20-µm polyimide substrate atop. The fabricated static reflectarrays are characterized in a near-field measurement range and their beam patterns at the focusing distance of 20 m are calculated with plane-to-plane transform. At this high frequency, fabrication tolerances are difficult to meet and, e.g., over-etching of the antenna and phase-shifting structure may offset the resonance frequency of the reflectarray element by more than its bandwidth.

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KW - near-field measurements

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M3 - Conference article in proceedings

SN - 978-0-8194-9506-8

T3 - Proceedings of SPIE

BT - Passive and Active Millimeter-Wave Imaging XVI

A2 - Wikner, David A.

A2 - Luukanen, Arttu R.

PB - International Society for Optics and Photonics SPIE

CY - Bellingham

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Tamminen A, Ala-Laurinaho J, Mäkelä S, Gomes Martins D, Häkli J, Koivisto P et al. Near-field measurements of submillimeter-wave reflectarrays. In Wikner DA, Luukanen AR, editors, Passive and Active Millimeter-Wave Imaging XVI. Bellingham: International Society for Optics and Photonics SPIE. 2013. 871506. (Proceedings of SPIE, Vol. 8715). https://doi.org/10.1117/12.2018606