Negative differential resistance in polymeric memory devices containing disordered block copolymers with semiconducting block

Marja Vilkman, Kimmo Solehmainen, A Laiho, Henrik Sandberg, Olli Ikkala

Research output: Contribution to journalArticleScientificpeer-review

11 Citations (Scopus)

Abstract

Previously, localized conducting filaments have been suggested to explain the memory effects in metal-polymer-metal stacks, and nanoparticles and fullerenes have been dispersed in polymers to promote filament electroformation under the local electric fields modified by them. Therein, however, the aggregation tendency of the dispersed additives can pose challenges for reproducibility and scalability. In this work, a triblock copolymer polystyrene-block-poly(9,9-di-n-hexyl-2,7-fluorene)-block-polystyrene (PS-b-PDHF-b-PS) with a semiconductor middle block was investigated and compared to pure insulating polystyrene (PS) as the polymer layer. The shortness of the PDHF block (2900 g/mol) in comparison to the PS blocks (17100 g/mol) leads to the disordered state, which contains PDHF chains (radius of gyration RgPDHF ≈ 2 nm) separated by the PS chains (radius of gyration RgPS ≈ 4 nm). As a layer between two Al electrodes in devices of different sizes, both polymers gave similar negative differential resistance (NDR) and scalability, indicating that the homogenously distributed nanometer-sized semiconducting chains in the insulating matrix did not promote uniformity of filament formation for NDR. An additional plasma etching suppressed the NDR, confirming the importance of electrode interface engineering to control the filament growth.
Original languageEnglish
Pages (from-to)1478-1482
Number of pages5
JournalOrganic Electronics
Volume10
Issue number8
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Polystyrenes
block copolymers
Block copolymers
polystyrene
Data storage equipment
filaments
Polymers
gyration
polymers
Scalability
Metals
Fullerenes
Electrodes
radii
electrodes
Plasma etching
plasma etching
metals
fullerenes
copolymers

Keywords

  • Block copolymer
  • Negative differential resistance
  • Organic memory

Cite this

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title = "Negative differential resistance in polymeric memory devices containing disordered block copolymers with semiconducting block",
abstract = "Previously, localized conducting filaments have been suggested to explain the memory effects in metal-polymer-metal stacks, and nanoparticles and fullerenes have been dispersed in polymers to promote filament electroformation under the local electric fields modified by them. Therein, however, the aggregation tendency of the dispersed additives can pose challenges for reproducibility and scalability. In this work, a triblock copolymer polystyrene-block-poly(9,9-di-n-hexyl-2,7-fluorene)-block-polystyrene (PS-b-PDHF-b-PS) with a semiconductor middle block was investigated and compared to pure insulating polystyrene (PS) as the polymer layer. The shortness of the PDHF block (2900 g/mol) in comparison to the PS blocks (17100 g/mol) leads to the disordered state, which contains PDHF chains (radius of gyration RgPDHF ≈ 2 nm) separated by the PS chains (radius of gyration RgPS ≈ 4 nm). As a layer between two Al electrodes in devices of different sizes, both polymers gave similar negative differential resistance (NDR) and scalability, indicating that the homogenously distributed nanometer-sized semiconducting chains in the insulating matrix did not promote uniformity of filament formation for NDR. An additional plasma etching suppressed the NDR, confirming the importance of electrode interface engineering to control the filament growth.",
keywords = "Block copolymer, Negative differential resistance, Organic memory",
author = "Marja Vilkman and Kimmo Solehmainen and A Laiho and Henrik Sandberg and Olli Ikkala",
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language = "English",
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Negative differential resistance in polymeric memory devices containing disordered block copolymers with semiconducting block. / Vilkman, Marja; Solehmainen, Kimmo; Laiho, A; Sandberg, Henrik; Ikkala, Olli.

In: Organic Electronics, Vol. 10, No. 8, 2009, p. 1478-1482.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Negative differential resistance in polymeric memory devices containing disordered block copolymers with semiconducting block

AU - Vilkman, Marja

AU - Solehmainen, Kimmo

AU - Laiho, A

AU - Sandberg, Henrik

AU - Ikkala, Olli

PY - 2009

Y1 - 2009

N2 - Previously, localized conducting filaments have been suggested to explain the memory effects in metal-polymer-metal stacks, and nanoparticles and fullerenes have been dispersed in polymers to promote filament electroformation under the local electric fields modified by them. Therein, however, the aggregation tendency of the dispersed additives can pose challenges for reproducibility and scalability. In this work, a triblock copolymer polystyrene-block-poly(9,9-di-n-hexyl-2,7-fluorene)-block-polystyrene (PS-b-PDHF-b-PS) with a semiconductor middle block was investigated and compared to pure insulating polystyrene (PS) as the polymer layer. The shortness of the PDHF block (2900 g/mol) in comparison to the PS blocks (17100 g/mol) leads to the disordered state, which contains PDHF chains (radius of gyration RgPDHF ≈ 2 nm) separated by the PS chains (radius of gyration RgPS ≈ 4 nm). As a layer between two Al electrodes in devices of different sizes, both polymers gave similar negative differential resistance (NDR) and scalability, indicating that the homogenously distributed nanometer-sized semiconducting chains in the insulating matrix did not promote uniformity of filament formation for NDR. An additional plasma etching suppressed the NDR, confirming the importance of electrode interface engineering to control the filament growth.

AB - Previously, localized conducting filaments have been suggested to explain the memory effects in metal-polymer-metal stacks, and nanoparticles and fullerenes have been dispersed in polymers to promote filament electroformation under the local electric fields modified by them. Therein, however, the aggregation tendency of the dispersed additives can pose challenges for reproducibility and scalability. In this work, a triblock copolymer polystyrene-block-poly(9,9-di-n-hexyl-2,7-fluorene)-block-polystyrene (PS-b-PDHF-b-PS) with a semiconductor middle block was investigated and compared to pure insulating polystyrene (PS) as the polymer layer. The shortness of the PDHF block (2900 g/mol) in comparison to the PS blocks (17100 g/mol) leads to the disordered state, which contains PDHF chains (radius of gyration RgPDHF ≈ 2 nm) separated by the PS chains (radius of gyration RgPS ≈ 4 nm). As a layer between two Al electrodes in devices of different sizes, both polymers gave similar negative differential resistance (NDR) and scalability, indicating that the homogenously distributed nanometer-sized semiconducting chains in the insulating matrix did not promote uniformity of filament formation for NDR. An additional plasma etching suppressed the NDR, confirming the importance of electrode interface engineering to control the filament growth.

KW - Block copolymer

KW - Negative differential resistance

KW - Organic memory

U2 - 10.1016/j.orgel.2009.08.012

DO - 10.1016/j.orgel.2009.08.012

M3 - Article

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JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

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