New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

G. Rajaram; T. S. Abhilash; Ch Ravi Kumar

New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

G. Rajaram, T. S. Abhilash, Ch Ravi Kumar

Not published at VTT

University of Hyderabad

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

Magnetic properties of AuGe/Ni/Au Ohmic contact for use in fabrication of high sensitivity Hall magnetic field sensors with integrated FET circuits, utilizing GaAs/AlGaAs 2DEG, are investigated. Measurements indicate that Ni undergoes solid-state, solubility limited dissolution into the AuGe layer during the anneal, and prior to alloying of the metallization structure for the formation of Ohmic contact. This results in increase of the melting temperature of the AuGe layer. The ohmic contact structure is rendered non-magnetic upon annealing and prior to the alloying. Therefore, the conventional process Ohmic contact process can be used for integrating Hall sensors with FET and pHEMT in monolithic form.

Original language	English
Title of host publication	2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 2012
Number of pages	4
Publication status	Published - 2012
MoE publication type	B3 Non-refereed article in conference proceedings
Event	27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States Duration: 23 Apr 2012 → 26 Apr 2012

Conference

Conference	27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
Country/Territory	United States
City	Boston, MA
Period	23/04/12 → 26/04/12

Keywords

2DEG
Alloyed OHMIC CONtacts
GaAs/AlGaAs
Hall sensors
HEMT
Magnetism of Ni

Cite this

@inproceedings{e659af16514e4db3a8a6ec1ee0c3e06e,

title = "New insights into formation of Ni-based alloyed Ohmic contacts to GaAs",

abstract = "Magnetic properties of AuGe/Ni/Au Ohmic contact for use in fabrication of high sensitivity Hall magnetic field sensors with integrated FET circuits, utilizing GaAs/AlGaAs 2DEG, are investigated. Measurements indicate that Ni undergoes solid-state, solubility limited dissolution into the AuGe layer during the anneal, and prior to alloying of the metallization structure for the formation of Ohmic contact. This results in increase of the melting temperature of the AuGe layer. The ohmic contact structure is rendered non-magnetic upon annealing and prior to the alloying. Therefore, the conventional process Ohmic contact process can be used for integrating Hall sensors with FET and pHEMT in monolithic form.",

keywords = "2DEG, Alloyed OHMIC CONtacts, GaAs/AlGaAs, Hall sensors, HEMT, Magnetism of Ni",

author = "G. Rajaram and Abhilash, {T. S.} and {Ravi Kumar}, Ch",

year = "2012",

language = "English",

isbn = "978-1-893580-19-0",

booktitle = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 2012",

note = "27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 ; Conference date: 23-04-2012 Through 26-04-2012",

}

TY - GEN

T1 - New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

AU - Rajaram, G.

AU - Abhilash, T. S.

AU - Ravi Kumar, Ch

PY - 2012

Y1 - 2012

N2 - Magnetic properties of AuGe/Ni/Au Ohmic contact for use in fabrication of high sensitivity Hall magnetic field sensors with integrated FET circuits, utilizing GaAs/AlGaAs 2DEG, are investigated. Measurements indicate that Ni undergoes solid-state, solubility limited dissolution into the AuGe layer during the anneal, and prior to alloying of the metallization structure for the formation of Ohmic contact. This results in increase of the melting temperature of the AuGe layer. The ohmic contact structure is rendered non-magnetic upon annealing and prior to the alloying. Therefore, the conventional process Ohmic contact process can be used for integrating Hall sensors with FET and pHEMT in monolithic form.

AB - Magnetic properties of AuGe/Ni/Au Ohmic contact for use in fabrication of high sensitivity Hall magnetic field sensors with integrated FET circuits, utilizing GaAs/AlGaAs 2DEG, are investigated. Measurements indicate that Ni undergoes solid-state, solubility limited dissolution into the AuGe layer during the anneal, and prior to alloying of the metallization structure for the formation of Ohmic contact. This results in increase of the melting temperature of the AuGe layer. The ohmic contact structure is rendered non-magnetic upon annealing and prior to the alloying. Therefore, the conventional process Ohmic contact process can be used for integrating Hall sensors with FET and pHEMT in monolithic form.

KW - 2DEG

KW - Alloyed OHMIC CONtacts

KW - GaAs/AlGaAs

KW - Hall sensors

KW - HEMT

KW - Magnetism of Ni

UR - http://www.scopus.com/inward/record.url?scp=84887340685&partnerID=8YFLogxK

M3 - Conference article in proceedings

AN - SCOPUS:84887340685

SN - 978-1-893580-19-0

BT - 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 2012

T2 - 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Y2 - 23 April 2012 through 26 April 2012

ER -

New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

Abstract

Conference

Keywords

Other files and links

Fingerprint

Cite this