New insights into formation of Ni-based alloyed Ohmic contacts to GaAs

G. Rajaram, T. S. Abhilash, Ch Ravi Kumar

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific

Abstract

Magnetic properties of AuGe/Ni/Au Ohmic contact for use in fabrication of high sensitivity Hall magnetic field sensors with integrated FET circuits, utilizing GaAs/AlGaAs 2DEG, are investigated. Measurements indicate that Ni undergoes solid-state, solubility limited dissolution into the AuGe layer during the anneal, and prior to alloying of the metallization structure for the formation of Ohmic contact. This results in increase of the melting temperature of the AuGe layer. The ohmic contact structure is rendered non-magnetic upon annealing and prior to the alloying. Therefore, the conventional process Ohmic contact process can be used for integrating Hall sensors with FET and pHEMT in monolithic form.

Original languageEnglish
Title of host publication2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 2012
Number of pages4
Publication statusPublished - 2012
MoE publication typeB3 Non-refereed article in conference proceedings
Event27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States
Duration: 23 Apr 201226 Apr 2012

Conference

Conference27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
CountryUnited States
CityBoston, MA
Period23/04/1226/04/12

Keywords

  • 2DEG
  • Alloyed OHMIC CONtacts
  • GaAs/AlGaAs
  • Hall sensors
  • HEMT
  • Magnetism of Ni

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    Rajaram, G., Abhilash, T. S., & Ravi Kumar, C. (2012). New insights into formation of Ni-based alloyed Ohmic contacts to GaAs. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 2012