New methods for the assessment of ESD threats to electronic components

Jaakko Paasi; Jeremy Smallwood; Hannu Salmela

New methods for the assessment of ESD threats to electronic components

Jaakko Paasi, Jeremy Smallwood, Hannu Salmela

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

We propose new methods for the assessment of real ESD threats to electronic components in modern electronics manufacturing environment. The methods are the use of current threshold for damage for ESD from a source into a device, energy threshold for damage for very short ESD pulses to a device, and charge threshold for CDM type of ESD. We suggest how guideline limits for ESD damage thresholds may be derived. The concept of the current threshold has been tested by experiments.

Original language	English
Title of host publication	2003 EOS/ESD Symposium Proceedings
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	151-160
ISBN (Electronic)	978-1-5853-7057-3
ISBN (Print)	1-58537-057-6
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25 - Las Vegas, United States Duration: 21 Sep 2003 → 25 Sep 2003

Conference

Conference	25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25
Country	United States
City	Las Vegas
Period	21/09/03 → 25/09/03

Access to Document

https://ieeexplore.ieee.org/document/5272027

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Cite this

@inproceedings{b86921f240834accb00886499b837457,

title = "New methods for the assessment of ESD threats to electronic components",

abstract = "We propose new methods for the assessment of real ESD threats to electronic components in modern electronics manufacturing environment. The methods are the use of current threshold for damage for ESD from a source into a device, energy threshold for damage for very short ESD pulses to a device, and charge threshold for CDM type of ESD. We suggest how guideline limits for ESD damage thresholds may be derived. The concept of the current threshold has been tested by experiments.",

author = "Jaakko Paasi and Jeremy Smallwood and Hannu Salmela",

note = "Project code: G3SU00014; 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25 ; Conference date: 21-09-2003 Through 25-09-2003",

year = "2003",

language = "English",

isbn = "1-58537-057-6",

pages = "151--160",

booktitle = "2003 EOS/ESD Symposium Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Paasi, J, Smallwood, J & Salmela, H 2003, New methods for the assessment of ESD threats to electronic components. in 2003 EOS/ESD Symposium Proceedings. IEEE Institute of Electrical and Electronic Engineers, pp. 151-160, 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25, Las Vegas, United States, 21/09/03. <https://ieeexplore.ieee.org/document/5272027>

TY - GEN

T1 - New methods for the assessment of ESD threats to electronic components

AU - Paasi, Jaakko

AU - Smallwood, Jeremy

AU - Salmela, Hannu

N1 - Project code: G3SU00014

PY - 2003

Y1 - 2003

N2 - We propose new methods for the assessment of real ESD threats to electronic components in modern electronics manufacturing environment. The methods are the use of current threshold for damage for ESD from a source into a device, energy threshold for damage for very short ESD pulses to a device, and charge threshold for CDM type of ESD. We suggest how guideline limits for ESD damage thresholds may be derived. The concept of the current threshold has been tested by experiments.

AB - We propose new methods for the assessment of real ESD threats to electronic components in modern electronics manufacturing environment. The methods are the use of current threshold for damage for ESD from a source into a device, energy threshold for damage for very short ESD pulses to a device, and charge threshold for CDM type of ESD. We suggest how guideline limits for ESD damage thresholds may be derived. The concept of the current threshold has been tested by experiments.

M3 - Conference article in proceedings

SN - 1-58537-057-6

SP - 151

EP - 160

BT - 2003 EOS/ESD Symposium Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25

Y2 - 21 September 2003 through 25 September 2003

ER -