Abstract
We propose new methods for the assessment of real ESD threats to electronic components in modern electronics manufacturing environment. The methods are the use of current threshold for damage for ESD from a source into a device, energy threshold for damage for very short ESD pulses to a device, and charge threshold for CDM type of ESD. We suggest how guideline limits for ESD damage thresholds may be derived. The concept of the current threshold has been tested by experiments.
| Original language | English |
|---|---|
| Title of host publication | 2003 EOS/ESD Symposium Proceedings |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 151-160 |
| ISBN (Electronic) | 978-1-5853-7057-3 |
| ISBN (Print) | 1-58537-057-6 |
| Publication status | Published - 2003 |
| MoE publication type | A4 Article in a conference publication |
| Event | 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25 - Las Vegas, United States Duration: 21 Sep 2003 → 25 Sep 2003 |
Conference
| Conference | 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS-25 |
|---|---|
| Country | United States |
| City | Las Vegas |
| Period | 21/09/03 → 25/09/03 |
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Cite this
Paasi, J., Smallwood, J., & Salmela, H. (2003). New methods for the assessment of ESD threats to electronic components. In 2003 EOS/ESD Symposium Proceedings (pp. 151-160). IEEE Institute of Electrical and Electronic Engineers. https://ieeexplore.ieee.org/document/5272027