Ni-Cr-Based Thin-Film Cryoresistors

Alexandre F. Satrapinski, A.M. Savin, S. Novikov, Ossi M. Hahtela

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.
    Original languageEnglish
    Pages (from-to)1206-1210
    JournalIEEE Transactions on Instrumentation and Measurement
    Volume58
    Issue number4
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Thin films
    resistors
    Resistors
    thin films
    coefficients
    Temperature
    temperature
    electrical resistivity
    Electrons
    electrons

    Keywords

    • Accurate measurements
    • cryoresistors
    • low temperature

    Cite this

    Satrapinski, A. F., Savin, A. M., Novikov, S., & Hahtela, O. M. (2009). Ni-Cr-Based Thin-Film Cryoresistors. IEEE Transactions on Instrumentation and Measurement, 58(4), 1206-1210. https://doi.org/10.1109/TIM.2008.2008579
    Satrapinski, Alexandre F. ; Savin, A.M. ; Novikov, S. ; Hahtela, Ossi M. / Ni-Cr-Based Thin-Film Cryoresistors. In: IEEE Transactions on Instrumentation and Measurement. 2009 ; Vol. 58, No. 4. pp. 1206-1210.
    @article{fb7c42af688b4a46aa99174e8fce96c9,
    title = "Ni-Cr-Based Thin-Film Cryoresistors",
    abstract = "Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5{\%} Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.",
    keywords = "Accurate measurements, cryoresistors, low temperature",
    author = "Satrapinski, {Alexandre F.} and A.M. Savin and S. Novikov and Hahtela, {Ossi M.}",
    year = "2009",
    doi = "10.1109/TIM.2008.2008579",
    language = "English",
    volume = "58",
    pages = "1206--1210",
    journal = "IEEE Transactions on Instrumentation and Measurement",
    issn = "0018-9456",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    number = "4",

    }

    Satrapinski, AF, Savin, AM, Novikov, S & Hahtela, OM 2009, 'Ni-Cr-Based Thin-Film Cryoresistors', IEEE Transactions on Instrumentation and Measurement, vol. 58, no. 4, pp. 1206-1210. https://doi.org/10.1109/TIM.2008.2008579

    Ni-Cr-Based Thin-Film Cryoresistors. / Satrapinski, Alexandre F.; Savin, A.M.; Novikov, S.; Hahtela, Ossi M.

    In: IEEE Transactions on Instrumentation and Measurement, Vol. 58, No. 4, 2009, p. 1206-1210.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Ni-Cr-Based Thin-Film Cryoresistors

    AU - Satrapinski, Alexandre F.

    AU - Savin, A.M.

    AU - Novikov, S.

    AU - Hahtela, Ossi M.

    PY - 2009

    Y1 - 2009

    N2 - Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.

    AB - Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.

    KW - Accurate measurements

    KW - cryoresistors

    KW - low temperature

    U2 - 10.1109/TIM.2008.2008579

    DO - 10.1109/TIM.2008.2008579

    M3 - Article

    VL - 58

    SP - 1206

    EP - 1210

    JO - IEEE Transactions on Instrumentation and Measurement

    JF - IEEE Transactions on Instrumentation and Measurement

    SN - 0018-9456

    IS - 4

    ER -