Ni-Cr-Based Thin-Film Cryoresistors

Alexandre F. Satrapinski, A.M. Savin, S. Novikov, Ossi M. Hahtela

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.
Original languageEnglish
Pages (from-to)1206-1210
JournalIEEE Transactions on Instrumentation and Measurement
Volume58
Issue number4
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

Fingerprint

Thin films
resistors
Resistors
thin films
coefficients
Temperature
temperature
electrical resistivity
Electrons
electrons

Keywords

  • Accurate measurements
  • cryoresistors
  • low temperature

Cite this

Satrapinski, A. F., Savin, A. M., Novikov, S., & Hahtela, O. M. (2009). Ni-Cr-Based Thin-Film Cryoresistors. IEEE Transactions on Instrumentation and Measurement, 58(4), 1206-1210. https://doi.org/10.1109/TIM.2008.2008579
Satrapinski, Alexandre F. ; Savin, A.M. ; Novikov, S. ; Hahtela, Ossi M. / Ni-Cr-Based Thin-Film Cryoresistors. In: IEEE Transactions on Instrumentation and Measurement. 2009 ; Vol. 58, No. 4. pp. 1206-1210.
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abstract = "Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5{\%} Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.",
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Satrapinski, AF, Savin, AM, Novikov, S & Hahtela, OM 2009, 'Ni-Cr-Based Thin-Film Cryoresistors', IEEE Transactions on Instrumentation and Measurement, vol. 58, no. 4, pp. 1206-1210. https://doi.org/10.1109/TIM.2008.2008579

Ni-Cr-Based Thin-Film Cryoresistors. / Satrapinski, Alexandre F.; Savin, A.M.; Novikov, S.; Hahtela, Ossi M.

In: IEEE Transactions on Instrumentation and Measurement, Vol. 58, No. 4, 2009, p. 1206-1210.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ni-Cr-Based Thin-Film Cryoresistors

AU - Satrapinski, Alexandre F.

AU - Savin, A.M.

AU - Novikov, S.

AU - Hahtela, Ossi M.

PY - 2009

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N2 - Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.

AB - Ni-Cr-based thin-film resistors have been fabricated and studied at temperatures of down to 50 mK. The resistivity of the films varied within (14-25)Omega*sq, depending on the additions of Cu, Al, Ge, and Mn. The minimum temperature coefficient (TC) at 4.2 K (TC = -50 middot 10 -6 /K) is obtained for Ni 75 Cr 20 CU 2.5 AI 2.5 (Evanohm alloy) doped with 2.5% Ge. At the 50-150 mK range, the TC of the alloy increases to -4.15 middot 10 -6 /mK. The resistors demonstrate the Kondo minimum at 20-30 K. The power coefficient of the 560-kOmega sample, which was measured at 4.2 K, was found to be les -0.008 middot 10 -6 /muW. Power dependence measurements at subkelvin temperatures showed an electron overheating at the power level of above 10 p W for a 500-k film resistor.

KW - Accurate measurements

KW - cryoresistors

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