Nickel stamp fabrication using step & stamp imprint lithography

Tomi Haatainen (Corresponding Author), Päivi Majander, Tommi Riekkinen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

34 Citations (Scopus)

Abstract

In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.
Original languageEnglish
Pages (from-to)948-950
Number of pages3
JournalMicroelectronic Engineering
Volume83
Issue number4-9
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed
Event31st International Conference on Micro- and Nano-Engineering - Vienna, Austria
Duration: 19 Sep 200522 Sep 2005

Fingerprint

Nickel
Lithography
lithography
nickel
wafers
Fabrication
fabrication
silicon
Silicon
Metallizing
plating
Silicon wafers
Plating
Thermoplastics
Electron beams
baths
Metals
electron beams
Substrates
metals

Keywords

  • nanoimprinting
  • nickel stamps
  • step & stamp imprint lithography

Cite this

Haatainen, Tomi ; Majander, Päivi ; Riekkinen, Tommi ; Ahopelto, Jouni. / Nickel stamp fabrication using step & stamp imprint lithography. In: Microelectronic Engineering. 2006 ; Vol. 83, No. 4-9. pp. 948-950.
@article{83f2724d95c44b50b6a186d37dead014,
title = "Nickel stamp fabrication using step & stamp imprint lithography",
abstract = "In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.",
keywords = "nanoimprinting, nickel stamps, step & stamp imprint lithography",
author = "Tomi Haatainen and P{\"a}ivi Majander and Tommi Riekkinen and Jouni Ahopelto",
year = "2006",
doi = "10.1016/j.mee.2006.01.038",
language = "English",
volume = "83",
pages = "948--950",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "4-9",

}

Nickel stamp fabrication using step & stamp imprint lithography. / Haatainen, Tomi (Corresponding Author); Majander, Päivi; Riekkinen, Tommi; Ahopelto, Jouni.

In: Microelectronic Engineering, Vol. 83, No. 4-9, 2006, p. 948-950.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Nickel stamp fabrication using step & stamp imprint lithography

AU - Haatainen, Tomi

AU - Majander, Päivi

AU - Riekkinen, Tommi

AU - Ahopelto, Jouni

PY - 2006

Y1 - 2006

N2 - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

AB - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

KW - nanoimprinting

KW - nickel stamps

KW - step & stamp imprint lithography

U2 - 10.1016/j.mee.2006.01.038

DO - 10.1016/j.mee.2006.01.038

M3 - Article

VL - 83

SP - 948

EP - 950

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 4-9

ER -