Nickel stamp fabrication using step & stamp imprint lithography

Tomi Haatainen (Corresponding Author), Päivi Majander, Tommi Riekkinen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    37 Citations (Scopus)


    In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.
    Original languageEnglish
    Pages (from-to)948-950
    Number of pages3
    JournalMicroelectronic Engineering
    Issue number4-9
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    Event31st International Conference on Micro- and Nano-Engineering - Vienna, Austria
    Duration: 19 Sept 200522 Sept 2005


    • nanoimprinting
    • nickel stamps
    • step & stamp imprint lithography


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