Nickel stamp fabrication using step & stamp imprint lithography

Tomi Haatainen (Corresponding Author), Päivi Majander, Tommi Riekkinen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    35 Citations (Scopus)

    Abstract

    In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.
    Original languageEnglish
    Pages (from-to)948-950
    Number of pages3
    JournalMicroelectronic Engineering
    Volume83
    Issue number4-9
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed
    Event31st International Conference on Micro- and Nano-Engineering - Vienna, Austria
    Duration: 19 Sep 200522 Sep 2005

    Fingerprint

    Nickel
    Lithography
    lithography
    nickel
    wafers
    Fabrication
    fabrication
    silicon
    Silicon
    Metallizing
    plating
    Silicon wafers
    Plating
    Thermoplastics
    Electron beams
    baths
    Metals
    electron beams
    Substrates
    metals

    Keywords

    • nanoimprinting
    • nickel stamps
    • step & stamp imprint lithography

    Cite this

    Haatainen, Tomi ; Majander, Päivi ; Riekkinen, Tommi ; Ahopelto, Jouni. / Nickel stamp fabrication using step & stamp imprint lithography. In: Microelectronic Engineering. 2006 ; Vol. 83, No. 4-9. pp. 948-950.
    @article{83f2724d95c44b50b6a186d37dead014,
    title = "Nickel stamp fabrication using step & stamp imprint lithography",
    abstract = "In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.",
    keywords = "nanoimprinting, nickel stamps, step & stamp imprint lithography",
    author = "Tomi Haatainen and P{\"a}ivi Majander and Tommi Riekkinen and Jouni Ahopelto",
    year = "2006",
    doi = "10.1016/j.mee.2006.01.038",
    language = "English",
    volume = "83",
    pages = "948--950",
    journal = "Microelectronic Engineering",
    issn = "0167-9317",
    publisher = "Elsevier",
    number = "4-9",

    }

    Nickel stamp fabrication using step & stamp imprint lithography. / Haatainen, Tomi (Corresponding Author); Majander, Päivi; Riekkinen, Tommi; Ahopelto, Jouni.

    In: Microelectronic Engineering, Vol. 83, No. 4-9, 2006, p. 948-950.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Nickel stamp fabrication using step & stamp imprint lithography

    AU - Haatainen, Tomi

    AU - Majander, Päivi

    AU - Riekkinen, Tommi

    AU - Ahopelto, Jouni

    PY - 2006

    Y1 - 2006

    N2 - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

    AB - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

    KW - nanoimprinting

    KW - nickel stamps

    KW - step & stamp imprint lithography

    U2 - 10.1016/j.mee.2006.01.038

    DO - 10.1016/j.mee.2006.01.038

    M3 - Article

    VL - 83

    SP - 948

    EP - 950

    JO - Microelectronic Engineering

    JF - Microelectronic Engineering

    SN - 0167-9317

    IS - 4-9

    ER -