Nickel stamp fabrication using step & stamp imprint lithography

Tomi Haatainen; Päivi Majander; Tommi Riekkinen; Jouni Ahopelto

doi:10.1016/j.mee.2006.01.038

Nickel stamp fabrication using step & stamp imprint lithography

Tomi Haatainen (Corresponding Author), Päivi Majander, Tommi Riekkinen, Jouni Ahopelto

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Abstract

In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

Original language	English
Pages (from-to)	948-950
Number of pages	3
Journal	Microelectronic Engineering
Volume	83
Issue number	4-9
DOIs	https://doi.org/10.1016/j.mee.2006.01.038
Publication status	Published - 2006
MoE publication type	A1 Journal article-refereed
Event	31st International Conference on Micro- and Nano-Engineering - Vienna, Austria Duration: 19 Sept 2005 → 22 Sept 2005

Keywords

nanoimprinting
nickel stamps
step & stamp imprint lithography

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10.1016/j.mee.2006.01.038

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@article{83f2724d95c44b50b6a186d37dead014,

title = "Nickel stamp fabrication using step & stamp imprint lithography",

abstract = "In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.",

keywords = "nanoimprinting, nickel stamps, step & stamp imprint lithography",

author = "Tomi Haatainen and P{\"a}ivi Majander and Tommi Riekkinen and Jouni Ahopelto",

year = "2006",

doi = "10.1016/j.mee.2006.01.038",

language = "English",

volume = "83",

pages = "948--950",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "4-9",

note = "31st International Conference on Micro- and Nano-Engineering, MNE 2005 ; Conference date: 19-09-2005 Through 22-09-2005",

}

TY - JOUR

T1 - Nickel stamp fabrication using step & stamp imprint lithography

AU - Haatainen, Tomi

AU - Majander, Päivi

AU - Riekkinen, Tommi

AU - Ahopelto, Jouni

PY - 2006

Y1 - 2006

N2 - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

AB - In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.

KW - nanoimprinting

KW - nickel stamps

KW - step & stamp imprint lithography

U2 - 10.1016/j.mee.2006.01.038

DO - 10.1016/j.mee.2006.01.038

M3 - Article

SN - 0167-9317

VL - 83

SP - 948

EP - 950

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-9

T2 - 31st International Conference on Micro- and Nano-Engineering

Y2 - 19 September 2005 through 22 September 2005

ER -

Nickel stamp fabrication using step & stamp imprint lithography

Abstract

Keywords

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