In this work we report of SSIL approach to fabricate a master for nickel stamp. Using this method we produced large area metal stamps with wafer size up to 100 mm with 100 nm patterns. Electron beam patterned silicon stamps with size of a few square millimeters were used in patterning. The pattern of the stamp was transferred into a 100 mm silicon wafer coated with mr-I 7030 thermoplastic using SSIL sequential imprinting. The TiW/Cu field metallization was then sputtered onto the wafer. A 40–100 μm nickel layer was electroplated using a commercial plating bath and pulsed current source. The nickel stamp was detached from the substrate in a solvent.
|Number of pages||3|
|Publication status||Published - 2006|
|MoE publication type||A1 Journal article-refereed|
|Event||31st International Conference on Micro- and Nano-Engineering - Vienna, Austria|
Duration: 19 Sept 2005 → 22 Sept 2005
- nickel stamps
- step & stamp imprint lithography