Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Jori Lemettinen; Nadim Chowdhury; Hironori Okumura; Iurii Kim; Sami Suihkonen; Tomas Palacios

doi:10.1109/LED.2019.2923902

Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Jori Lemettinen, Nadim Chowdhury, Hironori Okumura, Iurii Kim, Sami Suihkonen, Tomas Palacios

Not published at VTT

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35 Citations (Scopus)

Abstract

This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 μm exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1× 104. The maximum drain current was stable between 20 °C and 250 °C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.

Original language	English
Article number	8741077
Pages (from-to)	1245-1248
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	8
DOIs	https://doi.org/10.1109/LED.2019.2923902
Publication status	Published - 1 Aug 2019
MoE publication type	A1 Journal article-refereed

Keywords

aluminum-gallium-nitride
nitrogen-polar
polarization doping
Ultrawide-bandgap

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10.1109/LED.2019.2923902

http://www.scopus.com/inward/record.url?scp=85069824535&partnerID=8YFLogxK

Cite this

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title = "Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm",

abstract = "This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 μm exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1× 104. The maximum drain current was stable between 20 °C and 250 °C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.",

keywords = "aluminum-gallium-nitride, nitrogen-polar, polarization doping, Ultrawide-bandgap",

author = "Jori Lemettinen and Nadim Chowdhury and Hironori Okumura and Iurii Kim and Sami Suihkonen and Tomas Palacios",

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T1 - Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

AU - Lemettinen, Jori

AU - Chowdhury, Nadim

AU - Okumura, Hironori

AU - Kim, Iurii

AU - Suihkonen, Sami

AU - Palacios, Tomas

N1 - M1 - 8741077

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N2 - This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 μm exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1× 104. The maximum drain current was stable between 20 °C and 250 °C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.

AB - This letter reports the demonstration of N-polar Al0.8Ga0.2N/AlN continuously-graded-channel polarization-doped field-effect transistors (PolFETs) on SiC. A PolFET with a source to drain distance of 12 μm exhibited a maximum drain current of 62.8 mA/mm and an ON/OFF current ratio of 1.1× 104. The maximum drain current was stable between 20 °C and 250 °C operating temperatures. With the addition of 30-nm-thick Al2O3 gate insulator the maximum drain current increased to 126 mA/mm.

KW - aluminum-gallium-nitride

KW - nitrogen-polar

KW - polarization doping

KW - Ultrawide-bandgap

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U2 - 10.1109/LED.2019.2923902

DO - 10.1109/LED.2019.2923902

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 8741077

ER -

Nitrogen-polar polarization-doped field-effect transistor based on Al0.8Ga0.2N/AlN on SiC with drain current over 100 mA/mm

Abstract

Keywords

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