Noise measurement on single electron transistors using bias switching read-out

P.J. Hakonen (Corresponding Author), Mikko Kiviranta, Jari Penttilä, M. Paalanen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.
    Original languageEnglish
    Pages (from-to)227 - 229
    Number of pages3
    JournalThe European Physical Journal: Applied Physics
    Volume11
    Issue number3
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Single electron transistors
    single electron transistors
    Tunnel junctions
    noise measurement
    Capacitance
    Modulation
    tunnel junctions
    capacitance
    low frequencies
    modulation

    Keywords

    • single electron transistors
    • Coulomb blockade
    • single-electron tunneling
    • tunneling

    Cite this

    @article{3932cce24e634a818d01868bcfd0ebfa,
    title = "Noise measurement on single electron transistors using bias switching read-out",
    abstract = "We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.",
    keywords = "single electron transistors, Coulomb blockade, single-electron tunneling, tunneling",
    author = "P.J. Hakonen and Mikko Kiviranta and Jari Penttil{\"a} and M. Paalanen",
    year = "2000",
    doi = "10.1051/epjap:2000165",
    language = "English",
    volume = "11",
    pages = "227 -- 229",
    journal = "The European Physical Journal: Applied Physics",
    issn = "1286-0042",
    publisher = "EDP Sciences",
    number = "3",

    }

    Noise measurement on single electron transistors using bias switching read-out. / Hakonen, P.J. (Corresponding Author); Kiviranta, Mikko; Penttilä, Jari; Paalanen, M.

    In: The European Physical Journal: Applied Physics, Vol. 11, No. 3, 2000, p. 227 - 229.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Noise measurement on single electron transistors using bias switching read-out

    AU - Hakonen, P.J.

    AU - Kiviranta, Mikko

    AU - Penttilä, Jari

    AU - Paalanen, M.

    PY - 2000

    Y1 - 2000

    N2 - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

    AB - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

    KW - single electron transistors

    KW - Coulomb blockade

    KW - single-electron tunneling

    KW - tunneling

    U2 - 10.1051/epjap:2000165

    DO - 10.1051/epjap:2000165

    M3 - Article

    VL - 11

    SP - 227

    EP - 229

    JO - The European Physical Journal: Applied Physics

    JF - The European Physical Journal: Applied Physics

    SN - 1286-0042

    IS - 3

    ER -