Noise measurement on single electron transistors using bias switching read-out

P.J. Hakonen (Corresponding Author), Mikko Kiviranta, Jari Penttilä, M. Paalanen

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.
    Original languageEnglish
    Pages (from-to)227 - 229
    Number of pages3
    JournalThe European Physical Journal: Applied Physics
    Volume11
    Issue number3
    DOIs
    Publication statusPublished - 2000
    MoE publication typeA1 Journal article-refereed

    Keywords

    • single electron transistors
    • Coulomb blockade
    • single-electron tunneling
    • tunneling

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