Noise measurement on single electron transistors using bias switching read-out

P.J. Hakonen; Mikko Kiviranta; Jari Penttilä; M. Paalanen

doi:10.1051/epjap:2000165

Noise measurement on single electron transistors using bias switching read-out

P.J. Hakonen (Corresponding Author), Mikko Kiviranta, Jari Penttilä, M. Paalanen

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlO_x/Al devices with 1.2 μm island size and 100 × 100 nm² tunnel junctions, the noise at 10 Hz is 6 × 10^-4e/√(Hz), independent of the bias modulation.

Original language	English
Pages (from-to)	227 - 229
Number of pages	3
Journal	The European Physical Journal: Applied Physics
Volume	11
Issue number	3
DOIs	https://doi.org/10.1051/epjap:2000165
Publication status	Published - 2000
MoE publication type	A1 Journal article-refereed

Keywords

single electron transistors
Coulomb blockade
single-electron tunneling
tunneling

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10.1051/epjap:2000165

Cite this

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title = "Noise measurement on single electron transistors using bias switching read-out",

abstract = "We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation. ",

keywords = "single electron transistors, Coulomb blockade, single-electron tunneling, tunneling",

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AU - Kiviranta, Mikko

AU - Penttilä, Jari

AU - Paalanen, M.

PY - 2000

Y1 - 2000

N2 - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

AB - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

KW - single electron transistors

KW - Coulomb blockade

KW - single-electron tunneling

KW - tunneling

U2 - 10.1051/epjap:2000165

DO - 10.1051/epjap:2000165

M3 - Article

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VL - 11

SP - 227

EP - 229

JO - The European Physical Journal: Applied Physics

JF - The European Physical Journal: Applied Physics

IS - 3

ER -

Noise measurement on single electron transistors using bias switching read-out

Abstract

Keywords

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