We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.
- single electron transistors
- Coulomb blockade
- single-electron tunneling
Hakonen, P. J., Kiviranta, M., Penttilä, J., & Paalanen, M. (2000). Noise measurement on single electron transistors using bias switching read-out. The European Physical Journal: Applied Physics, 11(3), 227 - 229. https://doi.org/10.1051/epjap:2000165