Noise measurement on single electron transistors using bias switching read-out

P.J. Hakonen (Corresponding Author), Mikko Kiviranta, Jari Penttilä, M. Paalanen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.
Original languageEnglish
Pages (from-to)227 - 229
Number of pages3
JournalThe European Physical Journal: Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2000
MoE publication typeA1 Journal article-refereed

Fingerprint

Single electron transistors
single electron transistors
Tunnel junctions
noise measurement
Capacitance
Modulation
tunnel junctions
capacitance
low frequencies
modulation

Keywords

  • single electron transistors
  • Coulomb blockade
  • single-electron tunneling
  • tunneling

Cite this

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title = "Noise measurement on single electron transistors using bias switching read-out",
abstract = "We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.",
keywords = "single electron transistors, Coulomb blockade, single-electron tunneling, tunneling",
author = "P.J. Hakonen and Mikko Kiviranta and Jari Penttil{\"a} and M. Paalanen",
year = "2000",
doi = "10.1051/epjap:2000165",
language = "English",
volume = "11",
pages = "227 -- 229",
journal = "The European Physical Journal: Applied Physics",
issn = "1286-0042",
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}

Noise measurement on single electron transistors using bias switching read-out. / Hakonen, P.J. (Corresponding Author); Kiviranta, Mikko; Penttilä, Jari; Paalanen, M.

In: The European Physical Journal: Applied Physics, Vol. 11, No. 3, 2000, p. 227 - 229.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Noise measurement on single electron transistors using bias switching read-out

AU - Hakonen, P.J.

AU - Kiviranta, Mikko

AU - Penttilä, Jari

AU - Paalanen, M.

PY - 2000

Y1 - 2000

N2 - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

AB - We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is 6 × 10-4e/√(Hz), independent of the bias modulation.

KW - single electron transistors

KW - Coulomb blockade

KW - single-electron tunneling

KW - tunneling

U2 - 10.1051/epjap:2000165

DO - 10.1051/epjap:2000165

M3 - Article

VL - 11

SP - 227

EP - 229

JO - The European Physical Journal: Applied Physics

JF - The European Physical Journal: Applied Physics

SN - 1286-0042

IS - 3

ER -