Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level

Stefan Mertin, Clemens Nyffeler, Tapani Makkonen, Bernd Heinz, Andrea Mazzalai, Thorsten Schmitz-Kempen, Stephan Tiedke, Tuomas Pensala, Paul Muralt

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2% for Sc 20 Al 80 N and < 1% for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2% was achieved for a 33% Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.
    Original languageEnglish
    Title of host publication2019 IEEE International Ultrasonics Symposium, IUS 2019
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages2592-2595
    Number of pages4
    ISBN (Electronic)978-1-7281-4596-9, 978-1-7281-4596-9
    ISBN (Print)978-1-7281-4597-6
    DOIs
    Publication statusPublished - Oct 2019
    MoE publication typeA4 Article in a conference publication
    Event2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom
    Duration: 6 Oct 20199 Oct 2019

    Conference

    Conference2019 IEEE International Ultrasonics Symposium, IUS 2019
    Country/TerritoryUnited Kingdom
    CityGlasgow
    Period6/10/199/10/19

    Keywords

    • OtaNano

    Fingerprint

    Dive into the research topics of 'Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level'. Together they form a unique fingerprint.

    Cite this