Abstract
Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2% for Sc 20 Al 80 N and < 1% for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2% was achieved for a 33% Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.
Original language | English |
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Title of host publication | 2019 IEEE International Ultrasonics Symposium, IUS 2019 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 2592-2595 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-7281-4596-9, 978-1-7281-4596-9 |
ISBN (Print) | 978-1-7281-4597-6 |
DOIs | |
Publication status | Published - Oct 2019 |
MoE publication type | A4 Article in a conference publication |
Event | 2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom Duration: 6 Oct 2019 → 9 Oct 2019 |
Conference
Conference | 2019 IEEE International Ultrasonics Symposium, IUS 2019 |
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Country/Territory | United Kingdom |
City | Glasgow |
Period | 6/10/19 → 9/10/19 |
Keywords
- OtaNano