Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level

Stefan Mertin, Clemens Nyffeler, Tapani Makkonen, Bernd Heinz, Andrea Mazzalai, Thorsten Schmitz-kempen, Stephan Tiedke, Tuomas Pensala, Paul Muralt

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2% for Sc 20 Al 80 N and < 1% for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2% was achieved for a 33% Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.
    Original languageEnglish
    Title of host publication2019 IEEE International Ultrasonics Symposium, IUS 2019
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages2592-2595
    Number of pages4
    ISBN (Electronic)978-1-7281-4596-9, 978-1-7281-4596-9
    ISBN (Print)978-1-7281-4597-6
    DOIs
    Publication statusPublished - Oct 2019
    MoE publication typeA4 Article in a conference publication
    Event2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom
    Duration: 6 Oct 20199 Oct 2019

    Conference

    Conference2019 IEEE International Ultrasonics Symposium, IUS 2019
    CountryUnited Kingdom
    CityGlasgow
    Period6/10/199/10/19

    Fingerprint

    aluminum nitrides
    wafers
    scandium
    thin films
    actuation
    dielectric loss
    microelectromechanical systems
    manufacturing
    permittivity
    coefficients
    energy

    Cite this

    Mertin, S., Nyffeler, C., Makkonen, T., Heinz, B., Mazzalai, A., Schmitz-kempen, T., ... Muralt, P. (2019). Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level. In 2019 IEEE International Ultrasonics Symposium, IUS 2019 (pp. 2592-2595). [8925964] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ULTSYM.2019.8925964
    Mertin, Stefan ; Nyffeler, Clemens ; Makkonen, Tapani ; Heinz, Bernd ; Mazzalai, Andrea ; Schmitz-kempen, Thorsten ; Tiedke, Stephan ; Pensala, Tuomas ; Muralt, Paul. / Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level. 2019 IEEE International Ultrasonics Symposium, IUS 2019. IEEE Institute of Electrical and Electronic Engineers , 2019. pp. 2592-2595
    @inproceedings{80e99d2ef040433097fd76caab7112e4,
    title = "Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level",
    abstract = "Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30{\%} Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20{\%} and 33{\%} Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33{\%}) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2{\%} for Sc 20 Al 80 N and < 1{\%} for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2{\%} was achieved for a 33{\%} Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.",
    author = "Stefan Mertin and Clemens Nyffeler and Tapani Makkonen and Bernd Heinz and Andrea Mazzalai and Thorsten Schmitz-kempen and Stephan Tiedke and Tuomas Pensala and Paul Muralt",
    year = "2019",
    month = "10",
    doi = "10.1109/ULTSYM.2019.8925964",
    language = "English",
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    Mertin, S, Nyffeler, C, Makkonen, T, Heinz, B, Mazzalai, A, Schmitz-kempen, T, Tiedke, S, Pensala, T & Muralt, P 2019, Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level. in 2019 IEEE International Ultrasonics Symposium, IUS 2019., 8925964, IEEE Institute of Electrical and Electronic Engineers , pp. 2592-2595, 2019 IEEE International Ultrasonics Symposium, IUS 2019, Glasgow, United Kingdom, 6/10/19. https://doi.org/10.1109/ULTSYM.2019.8925964

    Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level. / Mertin, Stefan; Nyffeler, Clemens; Makkonen, Tapani; Heinz, Bernd; Mazzalai, Andrea; Schmitz-kempen, Thorsten; Tiedke, Stephan; Pensala, Tuomas; Muralt, Paul.

    2019 IEEE International Ultrasonics Symposium, IUS 2019. IEEE Institute of Electrical and Electronic Engineers , 2019. p. 2592-2595 8925964.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level

    AU - Mertin, Stefan

    AU - Nyffeler, Clemens

    AU - Makkonen, Tapani

    AU - Heinz, Bernd

    AU - Mazzalai, Andrea

    AU - Schmitz-kempen, Thorsten

    AU - Tiedke, Stephan

    AU - Pensala, Tuomas

    AU - Muralt, Paul

    PY - 2019/10

    Y1 - 2019/10

    N2 - Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2% for Sc 20 Al 80 N and < 1% for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2% was achieved for a 33% Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.

    AB - Scandium doped aluminium nitride (ScAlN) gained much attention during last years, since its piezoelectric response is much enlarged as compared to pure AlN films. Above 30% Sc the films are of high interest for piezoMEMS sensing and actuation, ultrasound generation, as well as energy harvesting applications. In this work, piezo-performance uniformity maps are presented for 20% and 33% Sc containing films, sputter deposited on 200-mm wafers. Furthermore, we employ a new method to determine the electro-mechanical coupling k t 2 . Coupling results for various Sc/(Sc+Al) concentration (0, 6, 20, 26, 33%) are shown. In addition, the dielectric constant ε r and dielectric loss tanδ, and the transversal and the longitudinal piezoelectric coefficients, e 31,f and d 33,f , were measured. The wafers show a high with-in-wafer uniformity (1s uniformity < 2% for Sc 20 Al 80 N and < 1% for Sc 33 Al 67 N). The highest coupling k t 2 = 21.2% was achieved for a 33% Sc film. The presented Al–Sc property–uniformity maps provide a good foundation for ScAlN based MEMS device design and manufacturing.

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    U2 - 10.1109/ULTSYM.2019.8925964

    DO - 10.1109/ULTSYM.2019.8925964

    M3 - Conference article in proceedings

    SN - 978-1-7281-4597-6

    SP - 2592

    EP - 2595

    BT - 2019 IEEE International Ultrasonics Symposium, IUS 2019

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Mertin S, Nyffeler C, Makkonen T, Heinz B, Mazzalai A, Schmitz-kempen T et al. Non-destructive piezoelectric characterisation of Sc doped aluminium nitride thin films at wafer level. In 2019 IEEE International Ultrasonics Symposium, IUS 2019. IEEE Institute of Electrical and Electronic Engineers . 2019. p. 2592-2595. 8925964 https://doi.org/10.1109/ULTSYM.2019.8925964