Non-hysteretic superconducting quantum interference proximity transistor with enhanced responsivity

This Letter presents fabrication and characterization of an optimized superconducting quantum interference proximity transistor. The present device, characterized by reduced tunnel junction area and shortened normal-metal section, demonstrates no hysteresis at low temperatures as we increased the Josephson inductance of the weak link by decreasing its cross section. It has consequently almost an order of magnitude improved magnetic field responsivity as compared to the earlier design. The modulation of both the current and the voltage across the junction have been measured as a function of magnetic flux piercing the superconducting loop.