Nonlinear electrical properties of Si three-terminal junction devices

F. Meng, J. Sun, M. Graczyk, K. Zhang, Mika Prunnila, Jouni Ahopelto, P. Shi, J. Chu, I. Maximov, H. Q. Xu (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

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    Abstract

    This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.
    Original languageEnglish
    Article number242106
    Number of pages3
    JournalApplied Physics Letters
    Volume97
    Issue number24
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

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    electrical properties
    terminal ballistics
    silicon
    room temperature
    electrical measurement
    ballistics
    insulators
    wafers
    electrons

    Cite this

    Meng, F. ; Sun, J. ; Graczyk, M. ; Zhang, K. ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, P. ; Chu, J. ; Maximov, I. ; Xu, H. Q. / Nonlinear electrical properties of Si three-terminal junction devices. In: Applied Physics Letters. 2010 ; Vol. 97, No. 24.
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    abstract = "This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.",
    author = "F. Meng and J. Sun and M. Graczyk and K. Zhang and Mika Prunnila and Jouni Ahopelto and P. Shi and J. Chu and I. Maximov and Xu, {H. Q.}",
    year = "2010",
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    Meng, F, Sun, J, Graczyk, M, Zhang, K, Prunnila, M, Ahopelto, J, Shi, P, Chu, J, Maximov, I & Xu, HQ 2010, 'Nonlinear electrical properties of Si three-terminal junction devices', Applied Physics Letters, vol. 97, no. 24, 242106. https://doi.org/10.1063/1.3526725

    Nonlinear electrical properties of Si three-terminal junction devices. / Meng, F.; Sun, J.; Graczyk, M.; Zhang, K.; Prunnila, Mika; Ahopelto, Jouni; Shi, P.; Chu, J.; Maximov, I.; Xu, H. Q. (Corresponding Author).

    In: Applied Physics Letters, Vol. 97, No. 24, 242106, 2010.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Nonlinear electrical properties of Si three-terminal junction devices

    AU - Meng, F.

    AU - Sun, J.

    AU - Graczyk, M.

    AU - Zhang, K.

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Shi, P.

    AU - Chu, J.

    AU - Maximov, I.

    AU - Xu, H. Q.

    PY - 2010

    Y1 - 2010

    N2 - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

    AB - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

    U2 - 10.1063/1.3526725

    DO - 10.1063/1.3526725

    M3 - Article

    VL - 97

    JO - Applied Physics Letters

    JF - Applied Physics Letters

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