Nonlinear electrical properties of Si three-terminal junction devices

F. Meng, J. Sun, M. Graczyk, K. Zhang, Mika Prunnila, Jouni Ahopelto, P. Shi, J. Chu, I. Maximov, H. Q. Xu (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Abstract

    This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.
    Original languageEnglish
    Article number242106
    Number of pages3
    JournalApplied Physics Letters
    Volume97
    Issue number24
    DOIs
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed

    Fingerprint Dive into the research topics of 'Nonlinear electrical properties of Si three-terminal junction devices'. Together they form a unique fingerprint.

  • Cite this

    Meng, F., Sun, J., Graczyk, M., Zhang, K., Prunnila, M., Ahopelto, J., Shi, P., Chu, J., Maximov, I., & Xu, H. Q. (2010). Nonlinear electrical properties of Si three-terminal junction devices. Applied Physics Letters, 97(24), [242106]. https://doi.org/10.1063/1.3526725