Nonlinear electrical properties of Si three-terminal junction devices

F. Meng, J. Sun, M. Graczyk, K. Zhang, Mika Prunnila, Jouni Ahopelto, P. Shi, J. Chu, I. Maximov, H. Q. Xu (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    17 Citations (Scopus)


    This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.
    Original languageEnglish
    Article number242106
    Number of pages3
    JournalApplied Physics Letters
    Issue number24
    Publication statusPublished - 2010
    MoE publication typeA1 Journal article-refereed


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