Nonlinear electrical properties of Si three-terminal junction devices

F. Meng; J. Sun; M. Graczyk; K. Zhang; Mika Prunnila; Jouni Ahopelto; P. Shi; J. Chu; I. Maximov; H. Q. Xu

doi:10.1063/1.3526725

Nonlinear electrical properties of Si three-terminal junction devices

F. Meng, J. Sun, M. Graczyk, K. Zhang, Mika Prunnila, Jouni Ahopelto, P. Shi, J. Chu, I. Maximov, H. Q. Xu (Corresponding Author)

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

Original language	English
Article number	242106
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3526725
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

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10.1063/1.3526725

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abstract = "This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.",

author = "F. Meng and J. Sun and M. Graczyk and K. Zhang and Mika Prunnila and Jouni Ahopelto and P. Shi and J. Chu and I. Maximov and Xu, {H. Q.}",

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T1 - Nonlinear electrical properties of Si three-terminal junction devices

AU - Meng, F.

AU - Sun, J.

AU - Graczyk, M.

AU - Zhang, K.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Shi, P.

AU - Chu, J.

AU - Maximov, I.

AU - Xu, H. Q.

PY - 2010

Y1 - 2010

N2 - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

AB - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

U2 - 10.1063/1.3526725

DO - 10.1063/1.3526725

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242106

ER -

Nonlinear electrical properties of Si three-terminal junction devices

Abstract

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