Nonlinear electrical properties of Si three-terminal junction devices

F. Meng, J. Sun, M. Graczyk, K. Zhang, Mika Prunnila, Jouni Ahopelto, P. Shi, J. Chu, I. Maximov, H. Q. Xu (Corresponding Author)

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Abstract

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.
Original languageEnglish
Article number242106
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number24
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

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electrical properties
terminal ballistics
silicon
room temperature
electrical measurement
ballistics
insulators
wafers
electrons

Cite this

Meng, F. ; Sun, J. ; Graczyk, M. ; Zhang, K. ; Prunnila, Mika ; Ahopelto, Jouni ; Shi, P. ; Chu, J. ; Maximov, I. ; Xu, H. Q. / Nonlinear electrical properties of Si three-terminal junction devices. In: Applied Physics Letters. 2010 ; Vol. 97, No. 24.
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abstract = "This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.",
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Meng, F, Sun, J, Graczyk, M, Zhang, K, Prunnila, M, Ahopelto, J, Shi, P, Chu, J, Maximov, I & Xu, HQ 2010, 'Nonlinear electrical properties of Si three-terminal junction devices', Applied Physics Letters, vol. 97, no. 24, 242106. https://doi.org/10.1063/1.3526725

Nonlinear electrical properties of Si three-terminal junction devices. / Meng, F.; Sun, J.; Graczyk, M.; Zhang, K.; Prunnila, Mika; Ahopelto, Jouni; Shi, P.; Chu, J.; Maximov, I.; Xu, H. Q. (Corresponding Author).

In: Applied Physics Letters, Vol. 97, No. 24, 242106, 2010.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

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AU - Meng, F.

AU - Sun, J.

AU - Graczyk, M.

AU - Zhang, K.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Shi, P.

AU - Chu, J.

AU - Maximov, I.

AU - Xu, H. Q.

PY - 2010

Y1 - 2010

N2 - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

AB - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

U2 - 10.1063/1.3526725

DO - 10.1063/1.3526725

M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

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